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Fundamental band edge optical absorption in Bi0.5Sb1.5Te3

  • Optics and Spectroscopy
  • Published:
Russian Physics Journal Aims and scope

Spectra of optical absorption in Bi0.5Sb1.5Te3 films grown on mica and KBr substrates have been investigated for T = 145 and 300 K. The data obtained have been analyzed together with the data of investigations on the fundamental absorption edge for Bi2Te3 available in the scientific literature. It has been revealed that the interband absorption spectra for both Bi0.5Sb1.5Te3 and Bi2Te3 represent a superposition of two components corresponding to direct and indirect allowed optical transitions. In this case, the least energy gap separating the valence band and the conduction band is direct for Bi2−xSbxTe3 (x ≤ 1.5, T = 300 K). For Bi0.5Sb1.5Te3 the temperature variation rates have been estimated for the thresholds of direct and indirect interband transitions. It has been shown that this solid solution is direct gap solution at T ≥ 145 K.

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  1. St. Petersburg State Polytechnic University, St. Petersburg, Russia

    A. N. Veis

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  1. A. N. Veis
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Correspondence to A. N. Veis.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 50–52, July, 2008.

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Veis, A.N. Fundamental band edge optical absorption in Bi0.5Sb1.5Te3 . Russ Phys J 51, 714–717 (2008). https://doi.org/10.1007/s11182-008-9100-8

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  • DOI: https://doi.org/10.1007/s11182-008-9100-8

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