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Electro-physical properties of cadmium-silicon diarsenide irradiated by H+ ions

  • Physics of Semiconductors and Dielectrics
  • Published:
Russian Physics Journal Aims and scope

Abstract

The effect of proton irradiation (E = 5 MeV, D = 2 · 1017 cm−2) on electro-physical properties of p-CdSiAs 2 crystals is studied. The irradiation resulted in semi-insulating CdSiAs 2 samples with the Fermi-level position in the proximity of Eg/2. The energy position of a “neutral” point is calculated for CdSiAs 2, and thermal stability of radiation defects is investigated.

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Authors and Affiliations

  1. Tomsk State University, Russia

    V. N. Brudnyi & T. V. Vedernikova

Authors
  1. V. N. Brudnyi
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  2. T. V. Vedernikova
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Correspondence to V. N. Brudnyi.

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__________

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 12–15, August, 2007.

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Brudnyi, V.N., Vedernikova, T.V. Electro-physical properties of cadmium-silicon diarsenide irradiated by H+ ions. Russ Phys J 50, 756–759 (2007). https://doi.org/10.1007/s11182-007-0114-4

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  • DOI: https://doi.org/10.1007/s11182-007-0114-4

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