Abstract
Point defects in n-indium phosphide were studied by deep-level transient spectroscopy (DLTS). A radiation-induced bistable defect is found to form under irradiation of a space-charge region of n-InP Shottky-barrier diodes. The transformations of the defect configuration stimulated by heating, illumination, and current flow are studied.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 80–84, April, 2005.
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Peshev, V.V. A Bistable Defect in InP. Russ Phys J 48, 417–422 (2005). https://doi.org/10.1007/s11182-005-0142-x
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DOI: https://doi.org/10.1007/s11182-005-0142-x