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Correlation between the parameters and structural perfection of silicon pin-photodetectors

  • Physics of Semiconductors and Dielectrics
  • Published:
Russian Physics Journal Aims and scope

Abstract

A semiquantitative analysis is performed and correlation between the major parameters and structural perfection of silicon pin-photodetectors is found using currently available methods. Both virgin single-crystal silicon wafers, high-resistance silicon structures (HRS), structures upon intermediate treatments, and finished pin-devices are investigated. In most cases oxygen and hydrogen are found to be the major impurities in virgin silicon, and doping inhomogeneities affect the photodetector parameters but slightly. Oxygen in an electrically active state generates additional energy levels, leading to changes in the concentration of major charge-carriers and in the parameters of structural defects. This also indirectly affects the parameters of finished devices.

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Authors and Affiliations

  1. I. I. Mechnikov Odessa National University, Odessa

    O. A. Kulinich & M. A. Glauberman

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  1. O. A. Kulinich
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  2. M. A. Glauberman
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 47–53, December, 2004.

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Kulinich, O.A., Glauberman, M.A. Correlation between the parameters and structural perfection of silicon pin-photodetectors. Russ Phys J 47, 1268–1275 (2004). https://doi.org/10.1007/s11182-005-0066-5

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  • DOI: https://doi.org/10.1007/s11182-005-0066-5

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