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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 109–111, October 2004.
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Peshev, V.V. Annealing of radiation-induced defects in n-GaAs. Russ Phys J 47, 1087–1090 (2004). https://doi.org/10.1007/s11182-005-0027-z
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DOI: https://doi.org/10.1007/s11182-005-0027-z