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Testing the relative deformation of the lattice parameter of semiinsulating GaAs using reflected radiation

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Abstract

A noncontact method for the express-testing of the relative deformation of lattice parameter (Δa/a) of semiinsulating GaAs has been developed. This method is based on measuring the reflected radiation in band-to-band regions L v3 − L c1 and X v5 − X c3 . The suggested method ensures a resolution of 4 × 10−5 in determining (Δa/a) and has a measurement accuracy of about 0.5%.

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Authors and Affiliations

  1. Research Institute of Mechanics and Physics, Chernyshevskii State University, ul. Asrakhanskaya 83, 410026, Saratov, Russia

    D. I. Bilenko, O. Ya. Belobrovaya, V. G. Lyubivyi & D. V. Terin

Authors
  1. D. I. Bilenko
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  2. O. Ya. Belobrovaya
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  3. V. G. Lyubivyi
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  4. D. V. Terin
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Additional information

Translated from Defektoskopiya, Vol. 40, No. 8, 2004, pp. 84–89.

Original Russian Text Copyright © 2004 by Bilenko, Belobrovaya, Lyubivyi, Terin.

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Bilenko, D.I., Belobrovaya, O.Y., Lyubivyi, V.G. et al. Testing the relative deformation of the lattice parameter of semiinsulating GaAs using reflected radiation. Russ J Nondestruct Test 40, 565–568 (2004). https://doi.org/10.1007/s11181-005-0100-2

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  • DOI: https://doi.org/10.1007/s11181-005-0100-2

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