Abstract
An experimental study is conducted into the effect of ultrasonic treatment on the surface-state distribution function of a gamma-irradiated Si/SiO2 interface. It is established that ultrasonic treatment reduces the density of radiation-induced states at the interface. It is shown that this effect may be linked to the ultrasound-induced transition of defects to an electrically inactive state.
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Translated from Mikroelektronika, Vol. 34, No. 6, 2005, pp. 420–423.
Original Russian Text Copyright © 2005 by Parchinskii.
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Parchinskii, P.B. Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment. Russ Microelectron 34, 356–358 (2005). https://doi.org/10.1007/s11180-006-0003-5
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DOI: https://doi.org/10.1007/s11180-006-0003-5