Abstract
The implantation of an additional p+ layer into the substrate of a silicon n+-p photodiode is theoretically evaluated as a method for adjusting its spectral response. It is shown that a fairly small p+-p potential barrier so created will greatly reduce the collection of electrons excited by long-wavelength photons in the bulk of the substrate. A suitable doping concentration is estimated at 1017 cm−3 by computer simulation. It is also found that boron-ion implantation in the energy range 300–800 keV will ensure adjustment of the spectral response in the visible range. A manageable analytical model is constructed.
Similar content being viewed by others
REFERENCES
Shur, M., Physics of Semiconductor Devices, Englewood Cliffs, N.J.: Prentice Hall, 1990. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1992.
Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981, 2nd ed. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1984.
US Patent 5 965 875, 1999.
Dierickx, B., Meynants, G., and Scheffer, D., Near 100% Fill Factor CMOS Active Pixels, Proc. IEEE CCD & AIS Workshop (Brugge, Belgium, 1997), p. P1.
Author information
Authors and Affiliations
Additional information
__________
Translated from Mikroelektronika, Vol. 34, No. 3, 2005, pp. 190–195.
Original Russian Text Copyright © 2005 by Vanyushin, Gergel’, Zimoglyad, Tishin.
Rights and permissions
About this article
Cite this article
Vanyushin, I.V., Gergel’, V.A., Zimoglyad, V.A. et al. Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation. Russ Microelectron 34, 155–159 (2005). https://doi.org/10.1007/s11180-005-0024-5
Received:
Issue Date:
DOI: https://doi.org/10.1007/s11180-005-0024-5