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Chemical vapor deposition of boron-containing films using B(OAlk)3 as precursors: thermodynamic modeling

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Abstract

Thermodynamic modeling of the process of chemical vapor deposition (CVD) of boron-containing films in the chemical system B—C—O—H was carried out. The possibility to use trialkyl borates B(OAlk)3 (Alk = Et, Pri) and their mixtures with helium, hydrogen, and ammonia to fabricate films of different composition was demonstrated. The CVD phase diagrams of the systems in question were calculated. The nature of the boundaries on these sections was analyzed. The chemical reaction equations determining the position of such lines are derived. Chemical equilibria corresponding to these reactions can be used to control the CVD process.

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Authors and Affiliations

  1. A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, 3 prosp. Akad. Lavrent’eva, 630090, Novosibirsk, Russian Federation

    V. A. Shestakov, V. I. Kosyakov & M. L. Kosinova

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  1. V. A. Shestakov
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  2. V. I. Kosyakov
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  3. M. L. Kosinova
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Correspondence to V. A. Shestakov.

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Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 11, pp. 1983–1990, November, 2019.

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Shestakov, V.A., Kosyakov, V.I. & Kosinova, M.L. Chemical vapor deposition of boron-containing films using B(OAlk)3 as precursors: thermodynamic modeling. Russ Chem Bull 68, 1983–1990 (2019). https://doi.org/10.1007/s11172-019-2656-3

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