Skip to main content

Advertisement

Log in

Impact sensitivity of energy systems based on nanoporous silicon and oxidant: influence of the hydrogen content and specific surface

  • Full Articles
  • Published:
Russian Chemical Bulletin Aims and scope

Abstract

The impact sensitivity of the energy systems based on nanoporous silicon, obtained by electrochemical etching of monocrystalline silicon wafers in an HF-containing electrolyte, and calcium perchlorate was studied using a modified Weller—Ventselberg technique (estimation of the impact sensitivity of initiating explosives). The impact sensitivity of these systems is shown to be determined by both the presence of hydrogen, which is stored on the porous silicon surface during the preparation of the latter, and also the influence of other factors, including the specific surface of porous silicon. The composition, amount of the generated gas, and gas evolution rate during nonisothermal and isothermal calcination of porous silicon in a temperature range of 60—120 °С were determined using methods of thermal gravimetry (TG), measurement of the gas volume, and mass spectrometry. The generated gas almost completely consists of hydrogen, and its content in the studied samples of porous silicon achieved ~3.8 wt.%. The calculated activation energy of the hydrogen evolution process in vacuo was 103.7±3.3 kJ mol–1. The dependences of the impact sensitivity of the energy composition based on porous silicon and heat of combustion of porous silicon on oxygen on the hydrogen content were established. The impact sensitivity of the energy system decreases with a decrease in the hydrogen content in porous silicon and its specific surface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. O. I. Ksenofontova, A. V. Vasin, V. V. Egorov, A. V. Bobyl, Y. F. Soldatenkov, E. I. Terukov, V. P. Ulin, N. V. Ulin, O. I. Kiselev, Technical Physics, 2014, 59, 66 [Zh. Tekh. Fiz., 2014, 84, 67].

    Article  CAS  Google Scholar 

  2. L. T. Canham, Properties of Porous Silicon, INSPEC, London, 1997.

  3. V. E. Borisenko, S. Ossicini, What is What in the Nanoworld, Wiley–VCH, Weinheim, 2004.

  4. S. K. Lazarouk, A. V. Dolbik, V. P. Jaguiro, V. A. Labunov, V. E. Borisenko, Semiconductors, 2005, 39, 881 [Fiz. Tekhn. Poluprovodnikov, 2005, 39, 917].

    Article  CAS  Google Scholar 

  5. D. Clement, J. Diener, E. Grass, N. Kunzner, V. Yu. Timoshenka, D. Kovalev, Physica Status Solidi, 2005, 202, 1357.

    Article  CAS  Google Scholar 

  6. S. K. Lazarouk, A. V. Dolbik, V. A. Labunov, V. E. Borisenko, Semiconductors, 2005, 39, 1113 [Fiz. Tekhn. Poluprovodnikov, 2007, 41, 1130].

    Google Scholar 

  7. E. G. Kishilev, A. Gany, Proc. of 6 Seminar New Trends in Research of Energetic Materials (Pardubice, April 10–12, 2013), Pardubice, 2013, 197.

    Google Scholar 

  8. A. A. Kowalski, A. V. Dolbik, S. K. Lazarouk, V. A. Labunov, Rep. NAS Belarus, 2005, 49, No. 3, 103 [Dokl. Nats. Akad. Nauk Rep. Bel., 2005, 49, No. 3, 103].

    Google Scholar 

  9. L. N. Gal’perin, Yu. R. Kolesov, Izmerit. Tekhnika [Measurement Technique], 1981, 4, 23 (in Russian).

    Google Scholar 

  10. K. K. Andreev, A. F. Belyaev, Teoriya vzryvchatykh veshchestv [Theory of Explosives], Oborongiz, Moscow, 1960, 82 (in Russian).

  11. S. M. Skuratov, V. P. Kolesov, A. F. Vorob’ev, in Termokhimiya [Thermochemistry], Izd-vo MGU, Moscow, 1966, 434 (in Russian).

  12. N. A. Kholevo, Chuvstvitelnost’ vzryvchatykh veshchestv k udaru [Impact Sensitivity of Explosives], Mashinostroenie, Moscow, 1974 (in Russian).

  13. V. A. Rabinovich, V. Ya. Khavin, Kratkii khimicheskii spravochnik [Brief Chemical Manual], Khimiya, Moscow, 1978, 75 (in Russian).

    Google Scholar 

  14. Yu. M. Mikhailov, S. V. Chapyshev, V. V. Nedel’ko, Russ. Chem. Bull. (Int. Ed.), 2009, 58, 2034 [Izv. Akad. Nauk, Ser. Khim., 2009, 2037].

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding authors

Correspondence to L. V. Ganina or G. G. Zegrya.

Additional information

Dedicated to the 60th anniversary of the Institute of Problems of Chemical Physics, Russian Academy of Sciences.

Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 2400—2404, October, 2016.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Mikhailov, Y.M., Garanin, V.A., Ganin, Y.V. et al. Impact sensitivity of energy systems based on nanoporous silicon and oxidant: influence of the hydrogen content and specific surface. Russ Chem Bull 65, 2400–2404 (2016). https://doi.org/10.1007/s11172-016-1596-4

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11172-016-1596-4

Keywords

Navigation