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Increased photocatalytic activity caused by B doping into BiVO4

Abstract

We have prepared B-doped BiVO4 (B-BiVO4) with oval-shaped morphology through a simple, one-step hydrothermal route employing sodium citrate as the chelating agent and H3BO3 as the dopant source. We then evaluated the photocatalytic activity of B-BiVO4 through the mineralization of phenoxyacetic acid. Our results demonstrate that the photocatalytic activity of BiVO4 increased appreciably following the B doping. We assign the increased photocatalytic activity to be due to the increased electron population, as is evidenced by the increased infrared absorption induced by ultraviolet–visible light. We furthermore propose the increased electron population to be caused by additional electronic transitions from the partially occupied mid-gap states created by the guest B dopants to the conduction band of the host BiVO4.

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Acknowledgements

We thank Ton Duc Thang University for financially supporting this research (Contract Number: 275/2017/TDT-HDLV-NCV).

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Correspondence to Hanggara Sudrajat.

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Sudrajat, H., Hartuti, S. Increased photocatalytic activity caused by B doping into BiVO4. Res Chem Intermed 45, 2179–2195 (2019). https://doi.org/10.1007/s11164-018-03725-9

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Keywords

  • Electron population
  • Boron doping
  • Bismuth vanadate
  • Photocatalysis