Photoluminescence and photocatalytic properties of Er³⁺-doped In₂O₃ thin films prepared by sol–gel: application to Rhodamine B degradation under solar light

Abstract

The effect of Er³⁺ doping (1%) on the structural, optical and photocatalytic properties of In₂O₃ thin films deposited on quartz substrates by spin coating was investigated. The In₂O₃:1% Er³⁺ films, annealed in the temperature range 800–1000 °C, were characterized by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy, UV–Vis spectroscopy, ellipsometry and photoluminescence (PL). The films are polycrystalline with a cubic structure and the lattice parameter increases with the incorporation of Er³⁺ owing to its larger radius. The SEM images of the film show a granular morphology with large grains (~ 200 nm). The doped In₂O₃ film exhibits less transparency than In₂O₃ in the UV–visible region with band gaps of 3.42 and 3.60 eV, respectively. PL shows strong lines at 548 and 567 nm, assigned to Er³⁺ under direct excitation at 532 nm. The energy diagram of the junction In₂O₃:1% Er³⁺/Na₂SO₄ (0.1 M) solution plotted from physical and photoelectrochemical characterizations shows the feasibility of the films for Rhodamine B (RhB) degradation under solar light. The conduction band at 2.22 V deriving from the In³⁺:5s orbital is suitably positioned with respect to the O₂/O ^·₂ level (~ 1.40 V_SCE), leading to oxidation of 32% of 10 ppm RhB within 40 min of solar irradiation.