Abstract
A novel method for the oxidation of chlorosilanes with atmospheric air in a pre-generated thin layer with a transformed molecular structure on a solid surface is considered. The proposed approach completely excludes the hydrolysis of chlorosilanes in air, as was experimentally confirmed. As was shown by the example of di-, tri-, and tetra-chlorosilane, they can be oxidized when they are encapsulated inside a silicon oxide cell previously prepared in an argon atmosphere. The encapsulated structures undergo slow transformations in air; however, even after a long time, hydrolysis does not occur in them. It is assumed that tautomeric species arising in the thin layers can form spatial clusters due to intermolecular bonding. For di-, tri-, and tetra-chlorosilane, the results of an IR study of their oxidation in the thin layers in situ for a month, electron microscopy of the obtained oxide films are presented, and a possible model of this process is proposed.
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Acknowledgements
This work was supported by the Ministry of Science and Higher Education of the Russian Federation in the Framework of the Basic Part of the State Task (theme FSWE-2020-0008 project 0728-2020-0008). The equipment of the Ural Center for Shared Use “Modern Nanotechnology” UrFU was used.
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The authors have no relevant financial or non-financial interests to disclose. All authors certify that they have no affiliations with or involvement in any organization or entity with any financial interest or non-financial interest in the subject matter or materials discussed in this manuscript. The authors have no financial or proprietary interests in any material discussed in this article. Figures were created using the Windows 10 pre-installed program “Paint”.
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Kapustin, R.V., Grinvald, I.I., Vorotyntsev, A.V. et al. Oxidation of chlorosilanes by atmospheric air in thin layers. Reac Kinet Mech Cat 135, 835–846 (2022). https://doi.org/10.1007/s11144-022-02177-y
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DOI: https://doi.org/10.1007/s11144-022-02177-y