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Estimations of phonon-induced decoherence in silicon–germanium triple quantum dots


The decoherence and dephasing rate of charge qubits in systems based on double and triple SiGe quantum dots are studied. At the short time limit, electron–phonon interaction causes an incomplete decay of the off-diagonal density matrix elements. Long-time relaxation decay dominates over dephasing at large times. The triple quantum dot system with the same interdot distance demonstrates lower relaxation rate in the wide range of parameters.

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  1. 1.

    Shi, Z., Simmons, C., Ward, D., Prance, J., Koh, T.S., Gamble, J.K., Wu, X., Savage, D., Lagally, M., Friesen, M.: ArXiv preprint (2012). arXiv:1208.0519

  2. 2.

    Busl, M., Granger, G., Gaudreau, L., Sánchez, R., Kam, A., Pioro-Ladrière, M., Studenikin, S., Zawadzki, P., Wasilewski, Z., Sachrajda, A.: Bipolar spin blockade and coherent state superpositions in a triple quantum dot. Nat. Nanotechnol. 8, 261–265 (2013)

    Article  ADS  Google Scholar 

  3. 3.

    Mehl, S., DiVincenzo, D.P.: Noise analysis of qubits implemented in triple quantum dot systems in a Davies master equation approach. Phys. Rev. B 87, 195309 (2013)

    Article  ADS  Google Scholar 

  4. 4.

    Thalakulam, M., Simmons, C., Rosemeyer, B., Savage, D., Lagally, M., Friesen, M., Coppersmith, S., Eriksson, M.: Fast tunnel rates in Si/SiGe one-electron single and double quantum dots. Appl. Phys. Lett. 96, 183104–183104 (2010)

    Article  ADS  Google Scholar 

  5. 5.

    Fischetti, M., Laux, S.: Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. J. Appl. Phys. 80, 2234–2252 (1996)

    Article  ADS  Google Scholar 

  6. 6.

    Friesen, M., Chutia, S., Tahan, C., Coppersmith, S.: Valley splitting theory of Si Ge/ Si/ Si Ge quantum wells. Phys. Rev. B 75, 115318 (2007)

    Article  ADS  Google Scholar 

  7. 7.

    Palma, G.M., Suominen, K.A., Ekert, A.K.: Quantum computers and dissipation. Proc. R. Soc. Lond. Ser. A Math. Phys. Eng. Sci. 452, 567–584 (1996)

    MathSciNet  Article  ADS  MATH  Google Scholar 

  8. 8.

    Fedichkin, L., Fedorov, A.: Study of temperature dependence of electron–phonon relaxation and dephasing in semiconductor double-dot nanostructures. IEEE Trans. Nanotechnol. 4, 65–70 (2005)

    Article  ADS  Google Scholar 

  9. 9.

    Blum, K.: Density Matrix Theory and Applications. Springer, Berlin (2012)

    Book  MATH  Google Scholar 

  10. 10.

    Leggett, A.J., Chakravarty, S., Dorsey, A., Fisher, M.P., Garg, A., Zwerger, W.: Dynamics of the dissipative two-state system. Rev. Mod. Phys. 59, 1 (1987)

    Article  ADS  Google Scholar 

  11. 11.

    Fedichkin, L., Fedorov, A., Privman, V.: Measures of Decoherence. In: Proc. SPIE 5105, Quantum Information and Computation, pp. 243–254 (2003)

  12. 12.

    Fedichkin, L., Fedorov, A., Privman, V.: Additivity of decoherence measures for multiqubit quantum systems. Phys. Lett. A 328, 87–93 (2004)

    MathSciNet  Article  ADS  MATH  Google Scholar 

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Correspondence to Leonid Fedichkin.

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Vasiliev, A.Y., Fedichkin, L. Estimations of phonon-induced decoherence in silicon–germanium triple quantum dots. Quantum Inf Process 13, 1893–1905 (2014).

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  • Quantum computation
  • Nanotechnology
  • Quantum dots
  • Phonons
  • Charge qubit
  • Decoherence