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Joining Silicon Carbide Plates by Titanium Disilicide-Based Compound

The present work is part of the Fourth Generation Reactor Program, which describes the methodology and results for joining SiC substrates by metallic silicides with SiC powder reinforcements. The severest temperatures in service are in the range of 1000 °C but short-time incursions at 1600 or 2000 °C have to be anticipated. One of the key issues is the joining of SiC f /SiC m composites to seal the combustible cladding. We describe the results for joining SiC substrates in liquid state using TiSi2. Joint integrity and joint strength can be improved by adding small SiC particles to the silicides powders. The assemblies are obtained in an inductive furnace. Cross-sections of the assembly, wettability tests, thermo-mechanical properties, and four-point bending tests are presented.

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The authors wish to thank M. Lahaye from Cecama University of Bordeaux and O. Cathy from LCTS respectively for their contribution to the chemical analysis and to the tomography characterization. The microwave experiments were done by E. Savary at Crismat (University of Caen, France).

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Correspondence to L. Maillé.

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Published in Poroshkovaya Metallurgiya, Vol. 52, No. 9–10 (493), pp. 151–157, 2013.

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Jacques, E., Le Petitcorps, Y., Maillé, L. et al. Joining Silicon Carbide Plates by Titanium Disilicide-Based Compound. Powder Metall Met Ceram 52, 606–611 (2014).

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  • brazing silicon carbide
  • ceramic–metal interface
  • ceramic matrix composites
  • intermetallic and disilicide compounds