The synthesis of Ti3SiC2 in vacuum is studied. The influence of the starting powders, charge composition, and sintering temperature on the phase composition of the material is analyzed. It is established that titanium hydride used instead of metal titanium substantially decreases the onset synthesis temperature and produces almost single-phase material after sintering at 1200–1250°C. However, this Ti3SiC2 does not have adequate density and strength. Practically single-phase Ti3SiC2 with high density and strength is synthesized in the range 1350–1400°C when the silicon content of the charge is higher than its stoichiometric amount by a factor of 1.2–1.25. It is shown that single-phase Ti3SiC2 or material with the required TiC content can be synthesized by variation of silicon content of the charge.
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Translated from Poroshkovaya Metallurgiya, Vol. 51, No. 7–8 (486), pp. 79–91, 2012.
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Ivanova, I.I., Demidik, A.N., Karpets, M.V. et al. Synthesis of titanium silicon carbide Ti3SiC2 under isothermal sintering. Powder Metall Met Ceram 51, 437–446 (2012). https://doi.org/10.1007/s11106-012-9453-y
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DOI: https://doi.org/10.1007/s11106-012-9453-y