The solubility of molybdenum in copper–silicon melts and the kinetics of growth of Mo5Si3 and MoSi2 layers on the molybdenum–melt interface at 1200°C are studied. At 0.20–0.36 at. parts Si, the solubility of molybdenum in the melts is described by the following equation: lgX Mo = –2.587 + + (3.282)X Si. The dependence of the growth rate constants of the Mo5Si3 layer on the activity of silicon in the 9–15 wt.% Si melt is established: kMo–Si = –0.3806 + (65.191) aSi. It is shown that two phases form at 20 wt.% Si: Mo5Si3 and MoSi2. Their thicknesses are 29.8 ± 2.9 μm and 25.7 ± ± 2.8 μm, respectively. The time dependence of the Mo5Si3 layer growth rate in Cu–Si melts is established to obey a parabolic law. The melt composition in three-phase equilibrium Mo–Mo5Si– melt is found to be (at. parts): XSi = 0.147; XMo = 7.86∙10–3; the rest is copper. At 35 wt.% Si, only the MoSi2 phase is formed at the interface.
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Translated from Poroshkovaya Metallurgiya, Vol. 51, No. 3–4 (484), pp. 117–125, 2012.
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Skorokhod, V.V., Titov, V.P., Golovkova, M.E. et al. Interaction of molybdenum with copper–silicon melts. Powder Metall Met Ceram 51, 222–228 (2012). https://doi.org/10.1007/s11106-012-9421-6
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DOI: https://doi.org/10.1007/s11106-012-9421-6