Skip to main content
Log in

Characteristics of thin plasmachemical silicon carbon nitride films deposited using hexamethyldisilane

  • Published:
Powder Metallurgy and Metal Ceramics Aims and scope

Silicon carbon nitride (SiCN) coatings are produced by plasma-enhanced chemical vapor deposition using hexamethyldisilane, N2, and H2 as precursors at various nitrogen flow rates (F N). X-ray diffraction data, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, adhesion, friction coefficient, abrasive wear resistance, and microprofiling of the film surface are used to characterize the coatings deposited on silicon substrates. The x-ray diffraction analysis shows that all the films have an amorphous structure. The chemical bonding in the films results from the main Si―C, Si―N, and C―N interatomic interactions. With higher \( {F_{{{\text{N}}_2}}} \), the wear resistance of the films increases and their friction coefficient decreases since Si―C bonds are strengthened. The SiCN films deposited using hexamethyldisilane as the main source material exhibit tribological properties that are comparable with those of amorphous SiCN films deposited using other precursors.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. A. Bendeddouche, R. Berjoan, E. Beche, et al., “Structural characterization of amorphous SiC x N y chemical vapor deposited coating,” J. Appl. Phys., 81, 6147−6154 (1997).

    Article  ADS  Google Scholar 

  2. A. Bendeddouche, R. Berjoan, E. Beche, and R. Hillel, “Hardness and stiffness of amorphous SiC x N y chemical vapor deposited,” Surf. Coat. Technol., 111, 184−190 (1999).

    Article  CAS  Google Scholar 

  3. I. Ferreira, E. Fortunato, P. Vilarinho, et al., “Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques,” J. Non-Cryst. Sol., 352, 1361−1366 (2006).

    Article  ADS  CAS  Google Scholar 

  4. N. J. Wagner, J. Cordill, L. Zajickova, et al., “Thermal plasma chemical vapor deposition of superhard nanostructured Si―C―N coatings,” Mater. Res. Soc. Symp. Proc., 880E, BB2.10.1/O3.10.1−5 (2005).

    Google Scholar 

  5. P. Jedrzejowski, J. Cizek, A. Amassian, et al., “Mechanical and optical properties of hard SiCN coatings prepared by PECVD,” Thin Sol. Films, 447–448, 201−207 (2004).

    Article  Google Scholar 

  6. H. Sachdev and P. Scheid, “Formation of silicon carbide and silicon carbonitride by RF-plasma CVD,” Diamond Relat. Mater., No. 10, 1160−1164 (2001).

  7. L. A. Ivashchenko, V. I. Ivashchenko, O. K. Porada, et al., “Hard plasma chemical coatings based on silicon carbon nitride,” Powder Metall. Met. Ceram., 46, No. 11−12, 543−549 (2007).

    Article  CAS  Google Scholar 

  8. F. J. Gomez, P. Prieto, E. Elizalde, and J. Piqueras, “SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition,” Appl. Phys. Lett., 69, 773−775 (1996).

    Article  ADS  CAS  Google Scholar 

  9. H. C. Lo, J. J. Wu, and C. Y. Wen, “Bonding characterization and nano-indentation study of the amorphous SiC x N y films and without hydrogen incorporation,” Diamond Relat. Mater., No. 10, 1916−1920 (2001).

  10. I. V. Afanasyev-Charkin and M. Nastasi, “Hard Si―N―C coatings produced by pulsed glow discharge deposition,” Surf. Coat. Technol., 186, 108−111 (2004).

    Article  CAS  Google Scholar 

  11. W. F. A. Besling, A. Goossens, B. Meester, and J. Schoonman, “Laser-induced chemical vapor deposition of nanostructured silicon carbonitride thin films,” J. Appl. Phys., 83, 544−553 (1998).

    Article  ADS  CAS  Google Scholar 

  12. X.-C. Xiao, Y.-W. Li, and L.-X. Song, “Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar2,” Appl. Surf. Sci., 145, 155−160 (2000).

    Article  ADS  Google Scholar 

  13. X.-M. He, T. N. Taylor, R. S. Lillard, et al., “Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films,” J. Phys: Condens. Matter., No. 12, L591−L597 (2000).

  14. K. B. Sundaram, Z. Alizadeh, R. M. Todi, and V. H. Desai, “Investigations on hardness of sputter deposited SiCN thin films,” Mater. Sci. Eng. A., 368, 103−108 (2004).

    Article  Google Scholar 

  15. J. Vlcek, M. Kormunda, and J. Cizek, “Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si―C―N films,” Surf. Coat. Technol., 160, 74−81 (2002).

    Article  CAS  Google Scholar 

  16. T. Berlind, N. Hellgren, M. P. Johansson, L. Hultman, “Microstructure, mechanical properties, and wetting behavior of Si―C―N thin films grown by reactive magnetron sputtering,” Surf. Coat. Technol., 141, 145−155 (2001).

    Article  CAS  Google Scholar 

  17. G. Lehmann, P. Hess, J.-J. Wu, et al., “Structure and elastic properties of amorphous silicon carbon nitride films,” Phys. Rev. B, 64, 165305−165310 (2001).

    Article  ADS  Google Scholar 

  18. T. Thärigen, G. Gippold, V. Riede, et al., “Hard amorphous CSi x N y thin films deposited by RF nitrogen plasma assisted pulsed laser ablation of mixed geaphite/Si3N4 targets,” Thin Sol. Films, 348, 103−113 (1999).

    Article  ADS  Google Scholar 

  19. X. B. Yan, B. K. Tay, G. Chen, and S. R. Yang, “Synthesis of silicon carbide nitride nanocomposite films by simple electrochemical method,” Electrochem. Commun., No. 8, 737−740 (2006).

  20. X.-W. Du, Y. Fu, J. Sun, and P. Yao, “The evolution of microstructure and photoluminescence of SiCN films with annealing temperature,” J. Appl. Phys., 99, 093503−093504 (2006).

    Article  ADS  Google Scholar 

  21. V. M. Ng, M. Xu, S. Y. Huang, et al., “Assembly and photoluminescence of SiCN nanoparticles,” Thin Sol. Films, 506–507, 283−287 (2006).

    Article  Google Scholar 

  22. E. Xie, Z. Ma, H. Lin, et al., “Preparation and characterization of SiCN films,” Optical Mater., 23, 151−156 (2003).

    Article  ADS  CAS  Google Scholar 

  23. C. W. Chen, C. C. Huang, Y. Y. Lin, et al., “The affinity of Si―N and Si―C bonding in amorphous silicon carbon nitride (a-SiCN) thin film,” Diamond Relat. Mater., 14, 1126−1130 (2005).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to V. I. Ivashchenko.

Additional information

Translated from Poroshkovaya Metallurgiya, Vol. 48, No. 1–2 (465), pp. 86–94, 2009.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ivashchenko, V.I., Porada, O.K., Ivashchenko, L.A. et al. Characteristics of thin plasmachemical silicon carbon nitride films deposited using hexamethyldisilane. Powder Metall Met Ceram 48, 66–72 (2009). https://doi.org/10.1007/s11106-009-9096-9

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11106-009-9096-9

Keywords

Navigation