Abstract
Oxide-layer formation on the surface of tungsten disilicide is studied during its electrochemical polarization in a 3% NaCl solution at 20 °C. It is indicated that the total thickness of the oxide layer that forms over a period of 90 min does not exceed 10 nm. The following multistage mechanism of anodic oxidation is established: tungsten oxides (for example, W3O and WO3) in which the greater the polarization, the greater the extent to which the metal is oxidized, the lower tungsten silicide W5Si3, and silica are formed. It is demonstrated that a double electrolytic layer on the interphase boundary between the tungsten disilicide and 3% NaCl solution is formed owing to dissociation of the silanolic groups situated a priori on the surface of the silicide. Here, the surface of the electrode acquires a negative charge, while the positively charged diffusion layer contains hydroxone ions. As a silica film forms on the WSi2, the material becomes more corrosion-resistant. On the whole, the scheme established for electrochemical oxidation of WSi2 complies with the mechanism of its high-temperature oxidation.
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Translated from Poroshkovaya Metallurgiya, Nos. 11–12(452), pp. 94–99, November–December, 2006.
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Chirkin, A.D., Lavrenko, V.A., Panasyuk, A.D. et al. Formation of oxide films on the surface of tungsten disilicide during anodic oxidation. Powder Metall Met Ceram 45, 588–592 (2006). https://doi.org/10.1007/s11106-006-0123-9
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DOI: https://doi.org/10.1007/s11106-006-0123-9