Abstract
The effects of major technological parameters in plasmochemical deposition have been examined as regards the properties of thin-film coatings based on amorphous hydrogenated silicon carbide (a-SiC : H) formed by the use of methyltrichlorosilane. Effects have been established from the substrate temperature, discharge power, and pressure of the reagent gases in the reaction chamber on the plasma performance. The films have been examined by secondary mass spectroscopy, and by infrared and optical spectroscopy, as well as by hardness testing by nanoindentation. Films based on amorphous hydrogenated silicon carbide can be used as wear-resistant coatings for metal-cutting tools and as active layers in semiconductor devices.
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Translated from Poroshkovaya Metallurgiya, Nos. 7–8(444), pp. 69–79, July–August, 2005.
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Porada, O.K., Rusakov, G.V., Ivashchenko, L.A. et al. Characteristics and Plasmochemical Deposition of Coatings Based on Amorphous Hydrogenated Silicon Carbide. Powder Metall Met Ceram 44, 363–371 (2005). https://doi.org/10.1007/s11106-005-0104-4
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DOI: https://doi.org/10.1007/s11106-005-0104-4