Abstract
Chromia grown on pure chromium at 900 °C for 30 min at an oxygen partial pressure p(O2) of 10−12 atm has been characterized using photoelectrochemical and electron microscopy techniques. This study reveals a duplex scale: n-chromia with equiaxis morphology in the internal part (~650 nm thick) and p-chromia with columnar morphology in the external part (~900 nm thick). Grain orientation maps also revealed the presence of a c-oriented chromia layer at the interface between the n- and the p-subscales. This 〈 0001 〉 textured layer was identified as the first-grown chromia layer. It means that internal n-equiaxis chromia grew by anionic transport governed by oxygen vacancy diffusion, whereas external p-columnar chromia layer grew outwards and was controlled by chromium vacancy diffusion.
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Acknowledgments
This work has benefited from the support of the PSEUDO project of the French National Research Agency (ANR) and was performed within the framework of the Centre of Excellence of Multifunctional Architectured Materials “CEMAM” n°AN-10-LABX-44-01 funded by the “Investments for the Future” Program. Special acknowledgments are given to Gilles Renou for his precious help on TEM microscope.
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Latu-Romain, L., Parsa, Y., Mathieu, S. et al. Duplex n- and p-Type Chromia Grown on Pure Chromium: A Photoelectrochemical and Microscopic Study. Oxid Met 86, 497–509 (2016). https://doi.org/10.1007/s11085-016-9648-6
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DOI: https://doi.org/10.1007/s11085-016-9648-6