A New Experimental Apparatus for In-Situ Characterization of Silica Growth During Passive Corrosion of SiC at Very High Temperatures

Abstract

A new experimental method based on Joule-heating and interferometry was developed in order to gather in situ quantitative information on the kinetics of silica growth during passive corrosion of SiC under CO2-containing environments at very high temperatures. This method proved efficient in studying the thin-oxide regime and the initial linear regime as well as the parabolic regime described in the Deal–Grove rate law. Linear rate constants followed an Arrhenius law with a very high activation energy of 593 kJ mol−1 and were independent of gas composition, suggesting the chemical reaction at the SiC/SiO2 interface involved a vacancy mechanism.

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Acknowledgments

The authors would like to thank Snecma Propulsion Solide and DGA for financial support to this work.

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Correspondence to Francis Rebillat.

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Brisebourg, M.Q., Rebillat, F. & Teyssandier, F. A New Experimental Apparatus for In-Situ Characterization of Silica Growth During Passive Corrosion of SiC at Very High Temperatures. Oxid Met 80, 289–298 (2013). https://doi.org/10.1007/s11085-013-9386-y

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Keywords

  • Silica growth
  • Silicon carbide
  • Carbon dioxide
  • Interferometry