Abstract
Very-thin-film kinetics data are presented for oxide growth on parent epitaxially formed (100) copper crystals at 25 and 50°C with different oxygen pressures in the range 0.01 torr to 170 torr. The results are interpreted in terms of the model based on electric-field driven ionic diffusion associated with the electrostatic-potential difference created by an electron-tunnel- current-virtual equilibrium.
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Fromhold, A.T., Anderson, M.H. Oxidation Kinetics of Epitaxial (100) Copper Films at 25°C and 50°C. Oxidation of Metals 62, 237–272 (2004). https://doi.org/10.1007/s11085-004-7810-z
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DOI: https://doi.org/10.1007/s11085-004-7810-z