Skip to main content
SpringerLink
Log in

Impact behavior of a novel GaN/MoS2 composite photodiode based thin-film by RF-sputtering for fast response photodetection application

  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

In this study, we present the manufacture and characterisation of a novel thin film photodiode based on a GaN/MoS2 composite. The purpose of this research is to explore the potential of this composite material for applications in fast response photodetection. The photodiodes were fabricated using physical vapor deposition technique. The investigation of the surface topology and structural characteristics of the nanostructured GaN/MoS2 thin films was conducted using scanning electron microscopy, Fourier-transform infrared spectroscopy, and X-ray diffraction techniques. The electrical performance of the fabricated photodiodes was investigated by measuring their current–voltage (I–V) characteristics within a bias voltage range from − 2 to + 2 V. The external quantum efficiency of the photodiodes were measured to be up to 11.86% and 8.26% for the pn-photodiode and Schottky photodiode, respectively. On the other hand, the internal quantum efficiency of the fabricated photodiodes were measured to be up to 13.78% and 10.02% for the pn-photodiode and Schottky photodiode, respectively. Also, a response time of 800 µs and 18.23 ms for Schottky-photodiode and pn-photodiodes respectively. These results demonstrate the potential of GaN/MoS2 composite photodiodes for fast response photodetection applications.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12

Similar content being viewed by others

References

  • Alves, L.C., et al.: Spatial uniformity of the silicon photodiodes for establishment of spectral responsivity scale. In: Proceedings of the XIX IMEKO World Congress (IMEKO), p. 164 (2009)

  • Bazkir, Ö.: Quantum efficiency determination of unbiased silicon photodiode and photodiode-based trap detectors. Rev. Adv. Mater. Sci. 21, 90–98 (2009)

    Google Scholar 

  • Bhagyaraj, S., Krupa, I.: Alginate-mediated synthesis of hetero-shaped silver nanoparticles and their hydrogen peroxide sensing ability. Molecules 25, 435–444 (2020)

    Google Scholar 

  • Brauer, G., et al.: Magnetron sputtering–milestones of 30 years. Vacuum 84, 1354–1359 (2010)

    ADS  Google Scholar 

  • Cao, B., Ma, S., Wang, W., et al.: Charge redistribution in Mg-doped p-type MoS2/GaN photodetectors. J. Phys. Chem. C 126, 18893–18899 (2022)

    Google Scholar 

  • Chen, Z.B., Forman, A.J., Jaramillo, T.F.: Bridging the gap between bulk and nanostructured photoelectrodes: the impact of surface states on the electrocatalytic and photoelectrochemical properties of MoS2. J. Phys. Chem. C 117, 9713–9722 (2013)

    Google Scholar 

  • Chen, C., et al.: Highly responsive MoS2 photodetectors enhanced by graphene quantum dots. Sci. Rep. 5, 11830–11838 (2015)

    ADS  Google Scholar 

  • Chen, R., et al.: A high-speed photodetector fabricated with tungsten-doped MoS2 by ion implantation. Adv. Electron. Mater. 8, 2200281–2200287 (2022)

    Google Scholar 

  • Chhowalla, M., et al.: The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013)

    Google Scholar 

  • Clifford, J.P., et al.: Fast, sensitive, and spectrally tuneable colloidal-quantum-dot photodetectors. Nat. Nanotechnol. 4, 40–44 (2009)

    ADS  Google Scholar 

  • Deng, J., et al.: High-performance hydrogen evolution electrocatalysis by layer-controlled MoS2 nanosheets. RSC Adv. 4, 34733–34738 (2014)

    ADS  Google Scholar 

  • Faisal, A.D., et al.: Synthesis of ZnO nanorods on a silicon substrate via hydrothermal route for optoelectronic applications. Opt. Quantum Electron. 52, 212–223 (2020)

    Google Scholar 

  • Ferrero, A., et al.: New model for the internal quantum efficiency of photodiodes based on photocurrent analysis. Appl. Opt. 44, 208–216 (2005)

    ADS  Google Scholar 

  • Hava, S., Ivri, J., Auslender, M.: Wavenumber-modulated patterns of transmission through one- and two-dimensional gratings on a silicon substrate. J. Opt. A Pure Appl. Opt. 3, S190–S195 (2001)

    ADS  Google Scholar 

  • Hicks, C., et al.: Quantum efficiency of silicon photodiodes in the near-infrared spectral range. Appl. Opt. 42, 4415–4422 (2003)

    ADS  Google Scholar 

  • Hu, K.H., et al.: Tribological properties of MoS2 nano-balls as filler in polyoxymethylene-based composite layer of three-layer self-lubrication bearing materials. Wear 266, 1198–1207 (2009)

    Google Scholar 

  • Hu, B.L., et al.: Synthesis of porous tubular C/MoS2 nanocomposites and their application as a novel electrode material for supercapacitors with excellent cycling stability. Electrochim. Acta 100, 24–28 (2013)

    Google Scholar 

  • Jain, S.K., et al.: 2D/3D hybrid of MoS2/GaN for a high-performance broadband photodetector. ACS Appl. Electron. Mater. 3, 2407–2414 (2021)

    Google Scholar 

  • Kelly, P.J., Arnell, R.D.: Magnetron sputtering: a review of recent developments and applications. Vacuum 56, 159–172 (2000)

    ADS  Google Scholar 

  • Key, P.J., et al.: Oxide-bias measurements in the silicon photodiode self-calibration technique. Metrologia 21, 81–88 (1985)

    ADS  Google Scholar 

  • Khan, A., Balakrishnan, K., Katona, T.: Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photon. 2, 77–84 (2008)

    ADS  Google Scholar 

  • Ko, J.S., et al.: All-two-dimensional semitransparent and flexible photodetectors employing graphene/MoS2/graphene vertical heterostructures. J. Alloys Compd. 864, 158118–158129 (2021)

    Google Scholar 

  • Konstantatos, G., et al.: Sensitive solution-processed visible wavelength photodetectors. Nat. Photon. 1, 531–534 (2007)

    ADS  Google Scholar 

  • Lamberti, A., et al.: Silicon-based technology for ligand-receptor molecular identification. J. at. Mol. Opt. Phys. 2012, 1–5 (2012)

    Google Scholar 

  • Leary, G., et al.: Comparison of xenon lamp-based and lead-based solar simulators. In: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), p. 3062. IEEE (2016)

  • Li, M., et al.: P-type doping in large-area monolayer MoS2 by chemical vapor deposition. ACS Appl. Mater. Interfaces 12, 6276–6282 (2020)

    Google Scholar 

  • Lima, M.S., et al.: Spectral responsivity calibration of the linear pyrometer of Inmetro. In: 18th IMEKO World Congress 2006: Metrology for a Sustainable Development, vol. 2, p. 1068 (2006)

  • Linnen, C.J., Coombe, R.D.: Mechanism of the photochemically induced reaction between Ga(CH3)3 and HN3 and the deposition of GaN films. Appl. Phys. Lett. 72, 88–90 (1998)

    ADS  Google Scholar 

  • Mahmoud, K., et al.: Measurement of normalized spectral responsivity of digital imaging devices by using a LED-based tunable uniform source. Appl. Opt. 52, 1263–1271 (2013)

    ADS  Google Scholar 

  • Martín, A., Escarpa, A.: Graphene: the cutting–edge interaction between chemistry and electrochemistry. TrAC Trend. Anal. Chem. 56, 13–26 (2014)

    Google Scholar 

  • Merki, D., et al.: Amorphous molybdenum sulfide films as catalysts for electrochemical hydrogen production in water. Chem. Sci. 2, 1262–1267 (2011)

    Google Scholar 

  • Morkoç, H.: Handbook of nitride semiconductors and devices. In: Morkoç, H. (ed.) Materials Properties, Physics and Growth. Wiley, Hoboken (2009)

    Google Scholar 

  • Moun, M., et al.: Understanding of MoS2/GaN, heterojunction diode and its photodetection properties. Sci. Rep. 8, 11799–11808 (2018)

    ADS  Google Scholar 

  • Naguib, M., et al.: Two-dimensional materials: 25th anniversary article: MXenes: a new family of two-dimensional materials. Adv. Mater. 26, 982–1005 (2014)

    Google Scholar 

  • Poudel, Y., Sławińska, J., Gopal, P., et al.: Absorption and emission modulation in a MoS2−GaN (0001) heterostructure by interface phonon−exciton coupling. Photon. Res. 7, 1511–1520 (2019)

    Google Scholar 

  • Pumera, M.: Graphene in biosensing. Mater. Today 14, 308–315 (2011)

    Google Scholar 

  • Pumera, M., Sofer, Z., Ambrosi, A.: Layered transition metal dichalcogenides for electrochemical energy generation and storage. J. Mater. Chem. A 2, 8981–8987 (2014)

    Google Scholar 

  • Roy, R.K., Pal, A.K.: Synthesis of gallium nitride films by a novel electrodeposition route. Mater. Lett. 59, 2204–2209 (2005)

    Google Scholar 

  • Schwierz, F.: Nanoelectronics flat transistors get off the ground. Nat. Nanotechnol. 6, 135–136 (2011)

    ADS  Google Scholar 

  • Tsang, T., et al.: Quantum efficiency of black silicon photodiodes at VUV wavelengths. Opt. Express 28, 13299–13309 (2020)

    ADS  Google Scholar 

  • van der Heide, A., et al.: comparison between large reference cells calibrated by ESTI-JRC, NREL and PTB, performed at ECN. In: Presented at the 20th European Photovoltaic Solar Energy Conference and Exhibition, vol. 6, p. 10 (2005)

  • Wan, Y., Xiao, J., Li, J., et al.: Epitaxial single-layer MoS2 on GaN with enhanced valley helicity. Adv. Mater. 30, 1703888–1703894 (2018)

    Google Scholar 

  • Wang, M., et al.: Enhanced lithium storage performances of hierarchical hollow MoS2 nanoparticles assembled from nanosheets. ACS Appl. Mater. Interfaces 5, 1003–1008 (2013)

    Google Scholar 

  • Wang, H., You, H., Xu, Y., et al.: High-responsivity and fast-response ultraviolet phototransistors based on enhanced p-GaN/AlGaN/GaN HEMTs. ACS Photon. 9, 2040–2045 (2022)

    Google Scholar 

  • Wang, P., Chang, C., Lin, S., Sheu, J., Sun, C.: Temporally probing the thermal phonon and charge transfer induced out-of-plane acoustical displacement of monolayer and bi-layer MoS2/GaN heterojunction. Photoacoustics 30, 100477–100486 (2023)

    Google Scholar 

  • Wu, Y., Li, Z.W., Ang, K.W., et al.: Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors. Photon. Res. 7, 1127–1133 (2019)

    Google Scholar 

  • Yagi, S.: Ultraviolet photoconductive hydrogenated amorphous and microcrystalline GaN. Jpn. J. Appl. Phys. 38, L792–L795 (1999)

    ADS  Google Scholar 

  • Yam, F.K., et al.: Gallium nitride: an overview of structural defects. Optoelectron. Mater. Tech. 4, 99–136 (2011)

    Google Scholar 

  • Yamada, A., Ho, K.P., Maruyama, T., Akimoto, K.: Molecular beam epitaxy of GaN on a substrate of MoS2 layered compound. Appl. Phys. A Mater. Sci. Process. 69, 89–92 (1999)

    ADS  Google Scholar 

  • Yoo, Y.S., et al.: Spectral responsivity calibration of the reference radiation thermometer at KRISS by using a super-continuum laser-based high accuracy monochromatic source. Metrologia 53, 1354–1365 (2016)

    ADS  Google Scholar 

  • Yougbaré, S., et al.: Gold nanorod-decorated metallic MoS2 nanosheets for synergistic photothermal and photodynamic antibacterial therapy. Nanomaterials 11, 3064–3075 (2021)

    Google Scholar 

  • Zeng, Z., et al.: Single-layer semiconducting nanosheets: high-yield preparation and device fabrication. Angew. Chem. Int. Ed. 50, 11093–11097 (2011)

    Google Scholar 

  • Zhou, K.G., et al.: A mixed-solvent strategy for efficient exfoliation of inorganic graphene analogues. Angew. Chem. Int. Ed. 50, 10839–10842 (2011)

    Google Scholar 

  • Zhou, X., et al.: Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors. 2D Mater. 4, 025048–025057 (2017)

    Google Scholar 

Download references

Acknowledgements

The authors would give their sincere thanks and gratefulness to NILES, Cairo University, for the encouragement, great help and endless support to come out with this study. The authors are thankful to the deanship of scientific research at the university of Bisha for supporting this work through the Fast-Track Research support program.

Funding

The authors have not disclosed any funding.

Author information

Authors and Affiliations

  1. Laser Sciences and Interactions Department, National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza, 12613, Egypt

    Ahmed Abdelhady A. Khalil, Maram T. H. Abou Kana & Hamed M. Kandel

  2. Division of Photometry and Radiometry, National Institute of Standards (NIS), President Sadat St., 136, Al-Haram, Giza, Egypt

    Abdallah M. Karmalawi & Alaaeldin A. Abdelmageed

  3. Department of Physics, College of Science, University of Bisha, P.O. Box 551, 61922, Bisha, Saudi Arabia

    Hamdan A. S. Al-shamiri

  4. Department of Physics, Faculty of Science, Cairo University, Giza, 12613, Egypt

    Emad Mousa

  5. Microelectronics Department, Electronics Research Institute (ERI), Cairo, Egypt

    Heba A. Shawkey

  6. Department of Physics, School of Science and Engineering (SSE), The American University in Cairo, Cairo, 11835, Egypt

    Mohamed A. Swillam

Authors
  1. Ahmed Abdelhady A. Khalil
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Abdallah M. Karmalawi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Alaaeldin A. Abdelmageed
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Hamdan A. S. Al-shamiri
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Emad Mousa
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Heba A. Shawkey
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Maram T. H. Abou Kana
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Hamed M. Kandel
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Mohamed A. Swillam
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

“All authors contributed to the study conception and design. Material preparation, data collection, measurements and analysis were performed by [Ahmed Abdelhady A. Khalil], [Abdallah M. Karmalawi] and [Alaaeldin A. Abdelmageed]. The first draft of the manuscript was written by [Hamdan A. S. El-shamiri], [Heba A. Shawkey] and [Emad Mousa] and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript. Revised by [Hamed M. Kandel], [Maram T. H. Abou Kana], and [Mohamed A. Swillam]”.

Corresponding author

Correspondence to Maram T. H. Abou Kana.

Ethics declarations

Conflict of interest

The authors declare no conflict of interest.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Khalil, A.A.A., Karmalawi, A.M., Abdelmageed, A.A. et al. Impact behavior of a novel GaN/MoS2 composite photodiode based thin-film by RF-sputtering for fast response photodetection application. Opt Quant Electron 56, 804 (2024). https://doi.org/10.1007/s11082-024-06643-w

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11082-024-06643-w

Keywords

Search

Navigation