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Electrical and optical performances investigation of planar solar blind photodetector based on IZTO/Ga2O3 Schottky diode via TCAD simulation

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Abstract

The development of sophisticated solar-blind photodetector devices is being motivated by the increasing need for solar-blind sensors with remarkable photosensitive qualities. This work is a modeling and simulation of electrical and optical properties of a Schottky photodetector based on gallium oxide (Ga2O3), one of the most promising wide-band-gap material. It focuses on the optimization of the device structure design, assumed fully transparent to visible light. In addition, analysis of electrical and optical properties of β-Ga2O3-based photodetector was carried out to accurately describe physical phenomenon through the semiconductor bulk. The impact of several parameters of the device on its performances is such as layer thickness, doping concentration, and electron affinity, anode work function and different cathode contact materials. Besides that, and for more understanding the real behaviors within different layers of the photodetector, diverse optical parameters were varied, for instance the light power intensity and the spectral response by changing the optical wavelength. The obtained results show a promising performance enhancement compared to previous works, for instance the photo to dark current ratio of 3 × 104, the good spectral responsivity in UV light illumination [250–350 nm], in addition to the relatively high detectivity of 2.5 × 109 (Jones).

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Acknowledgements

The authors are grateful for Dr. Madani Labed and Dr Mohammed Labed for their support and recommendations.

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The authors declare that no funds, grants, or other support were received during the preparation of this manuscript

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Authors and Affiliations

  1. Laboratory of Advanced Technologies of Electrical Engineering (LATAGE), Faculty of Electrical and Computer Engineering, Université Mouloud Mammeri de Tizi Ouzou, BP 17 RP, 15000, Tizi-Ouzou, Algeria

    Naila Boulahia & Dalila Hocine

  2. Microfabrication Technology Platform, Centre de Développement des Technologies Avancées, Cité 20 août 1956, 16081, Algiers, Baba Hassen, Algeria

    Walid Filali

  3. Microelectronics and Nanotechnologies Division, Centre de Développement des Technologies Avancées, Cité 20 août 1956, 16081, Algiers, Baba Hassen, Algeria

    Slimane Oussalah

  4. Laboratory of Semiconducting and Metallic Materials (LMSM), Mohamed Khider University, 07000, Biskra, Algeria

    Nouredine Sengouga

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  1. Naila Boulahia
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  2. Walid Filali
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  3. Dalila Hocine
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  4. Slimane Oussalah
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  5. Nouredine Sengouga
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Contributions

All authors have contributed to the study simulation and investigation. Material preparation, data collection and analysis were performed by Boulahia Naila, and Filali Walid. The first draft of the manuscript was written by Boulahia Naila and Hocine Dalila. Results analysis and validation have been done by Boulahia Naila, Oussalah Slimane and Noureddine Sengouga All authors read and approved the final manuscript.

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Correspondence to Walid Filali.

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Boulahia, N., Filali, W., Hocine, D. et al. Electrical and optical performances investigation of planar solar blind photodetector based on IZTO/Ga2O3 Schottky diode via TCAD simulation. Opt Quant Electron 56, 549 (2024). https://doi.org/10.1007/s11082-023-06231-4

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