Abstract
This letter reports Al/Red Phosphorus (RP)/WSe2/ITO heterostructure based self-powered UV photodetector designed by low-cost solution technique. The p–n junction is formed between p-type WSe2 and n-type red phosphorus (RP) material deposited over ITO coated PET substrate. The designed photodetector device shows Responsivity \({{\text{R}}}_{{\text{s}}}\)(A/W) of 0.23 and 0.12 (voltage bias ~ 2 V) at 300 nm and 350 nm wavelength, respectively. The rise and fall time of the device are obtained as ~ 0.19 µs and ~ 0.12 µs in UV region.
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Acknowledgements
The authors are thankful to Centre of Interdisciplinary Research (CIR), Motilal Nehru National Institute of Technology (MNNIT), Allahabad and to VLSI Laboratory, Indian Institute of Information Technology, Allahabad for providing equipment facilities to perform the experiment.
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TB has prepared the samples and wrote main manuscript text. AKD has helped in investigation of materials, building of concepts. RKN and ST has supervised, supported in making resources available and writing-review and editing. All authors reviewed the manuscript.
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Bajpai, T., Dwivedi, A.K., Nagaria, R.K. et al. Red phosphorus/WSe2 heterojunction based self-powered UV photodetector. Opt Quant Electron 56, 335 (2024). https://doi.org/10.1007/s11082-023-05976-2
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DOI: https://doi.org/10.1007/s11082-023-05976-2