Abstract
This work introduces the synthesis and the characterization of N-doped TiO2 and Co3O4 thin films prepared via DC reactive magnetron sputtering technique. N-doped TiO2 thin films was deposited on indium-tin oxide (ITO) conducting substrate at different nitrogen ratios, then the Co3O4 thin film was deposited onto the N-doped TiO2 layer to synthesize a double-layer TiO2-N/Co3O4 Photoelectrochromic device. Several techniques were used to characterize the produces which are x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), Fourier-transform infrared (FTIR) spectroscopy and UV–Vis spectroscopy. The Photoelectrochromic device was characterized by UV–Vis spectroscopy and the results show that the double-layer N-doped TiO2 /Co3O4 was sensitive to light, that’s due to the photogenerated holes in the valence band of photocatalyst (N-doped TiO2) and led to direct electron transfer from Co3O4 to N-doped TiO2 layer.The optical transmittance modulation \(\Delta T={T}_{b}- {T}_{c}\) was 27.1% after 2.5 h irradiation by xenon light.
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FJK has proposed the work, analyzed the results, and written the manuscript. NHH has performed the experimental work, collected the results, and written the manuscript ZSA has performed the experimental work, collected the results, and written the manuscript
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Kadhim, F.J., Hashim, N.A.H. & Abdulsattar, Z.S. Synthesis and study of photoelectrochromic and photocatalytic behavior of double-layer N-doped TiO2/Co3O4 configuration via DC reactive magnetron sputtering. Opt Quant Electron 56, 270 (2024). https://doi.org/10.1007/s11082-023-05696-7
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DOI: https://doi.org/10.1007/s11082-023-05696-7