Skip to main content
SpringerLink
Log in

Aluminium doping effects on physical properties of semiconductors InSb for optoelectronic devices: a computational insight

  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

In this study, first-principles numerical computations for zinc-blende ternary alloys (In1−xAlxSb) are performed concerning elastic, structural, electronic, thermal, and optical properties. This study is carried out using the “full-potential linearized augmented-plane-wave plus local-orbital, (FP-L(APW + lo))” approach framed within “density functional theory" and realized in the WIEN2k computational package. From our computational work, performed at the level of generalized gradient approximation suggested by Wu and Cohen (GGA-WC) for the exchange–correlation functional, we see that our obtained results for the structural parameters of the title alloys (In1−xAlxSb) are increasing with increasing concentration x, and by and large, follow the Vegard’s law. To predict reliable electronic and optical properties "Tran–Blaha modified Becke–Johnson (mBJ)" potential approach was employed. We note, except at x = 1 and x = 0.75, electronic band gaps are of direct nature for evaluated concentrations of the title alloys. In addition, noticeable variation is noted in the optical parameters with x concentration. For analyzing the thermal character of the title alloys, the "quasi-harmonic Debye model" scheme is used. Comparison of obtained results with experimental and predicted ones is found in good agreement where available. Hence our computational study of the title alloys endorses the reliability of our investigations and might offer a valuable platform for future predictions and experimental work as well as suggest that title material is the best candidate for optoelectronics. The optical quantities obtained using mBJ show low energy loss and reflectivity and high absorption capability in the infrared and visible regions for In1−xAlxSb, making these materials potential candidates in solar cell applications.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig.8
Fig.9
Fig.10
Fig.11
Fig.12

Similar content being viewed by others

Data availability

The datasets generated and/or analyzed during the current study are available from the corresponding author on reasonable request.

Code availability

Not applicable.

References

  • Adachi, S.: Springer (1999).

  • Adachi, S.: Properties of Group IV, III–V, and II–VI Semiconductors. Wiley, Chichester (2005)

    Google Scholar 

  • Alay-e-Abbas, S.M., Nazir, S., Noor, N.A., Amin, N., Shaukat, A.: Thermodynamic stability and vacancy defect formation energies in SrHfO3. J. Phys. Chem. C 118, 19625–19634 (2014)

    CAS  Google Scholar 

  • Algarni, H., Al-Hagan, O.A., Bourassa, N., Khan, M.A., Alhuwaymel, T.F.: Dependence on pressure of the elastic parameters and microhardness of InSb. Infrared Phys. Technol. 86, 176–180 (2017)

    CAS  ADS  Google Scholar 

  • Algarni, H., Al-Hagan, O.A., Bouarissa, N., Alhuwaymel, T.F., Khan, M.A.: Elastic constants and mechanical stability of InxAl1−xAsySb1−y lattice-matched to different substrates. Philos. Mag. 98, 2582–2594 (2018)

    CAS  ADS  Google Scholar 

  • Ali, M.A., Hossain, M.M., Hossain, M.A., Nasir, M.T., Uddin, M.M., Hasan, M.Z., Islam, A.K.M.A., Naqib, S.H.: Recently synthesized (Zr1−xTix)2AlC (0 ≤ x ≤ 1) solid solutions: theoretical study of the effects of M mixing on physical properties. J. Alloys Compd. 743, 146 (2018)

    CAS  Google Scholar 

  • Andersen, O.K.: Linear methods in band theory. Phys. Rev. B 12, 3060 (1975)

    CAS  ADS  Google Scholar 

  • Anderson, O.L., Demarest, H.H., Jr.: Elastic constants the central force model for cubic structures: polycrystalline aggregates and instabilities. J. Geophys. Res. 76, 1349–1369 (1971)

    CAS  ADS  Google Scholar 

  • Asadi, Y., Nourbakhsh, Z.: First principle characterization of structural, electronic, mechanical, thermodynamic, linear and nonlinear optical properties of zinc blende InAs, InSb and their InAsxSb1−x ternary alloys. J. Phys. Chem. Solid 132, 213–221 (2019)

    CAS  ADS  Google Scholar 

  • Ashley, T., Dean, A.B., Elliott, C.T., McConville, C.F., Pryce, G.J., Whitehouse, C.R.: Ambient temperature diodes and field-effect transistors in InSb/In1−xAlxSb. Appl. Phys. Lett. 59, 1761–1763 (1991)

    CAS  ADS  Google Scholar 

  • Ashley, T., Elliot, C.T., Gordon, N.T., Hall, R.S., Johnson, A.D., Pryce, G.J.: Uncooled InSb/In1−xAlxSb mid-infrared emitter. Appl. Phys. Lett. 64, 2433–2435 (1994)

    CAS  ADS  Google Scholar 

  • Ashley, T., Elliott, C.T., Jefferies, R., Johnson, A.D., Pryce, G.J., White, A.M., Carroll, M.: Mid-infrared In1−xAlXSb/InSb heterostructure diode lasers. Appl. Phys. Lett. 70, 931–933 (1997)

    CAS  ADS  Google Scholar 

  • Aspnes, D.E., Studna, A.A.: Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV. Phys. Rev. B 27, 985–1009 (1983)

    CAS  ADS  Google Scholar 

  • Barate, D., Teissier, R., Wang, Y., Baranov, A.N.: Short wavelength intersubband emission from InAs∕AlSb quantum cascade structures. Appl. Phys. Lett. 87, 051103 (2005)

    ADS  Google Scholar 

  • Bastos, C.M.O., Sabino, F.P., Sipahi, G.M., Da Silva, J.L.F.: A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. J. Appl. Phys. 123, 065702 (2018)

    ADS  Google Scholar 

  • Benchehima, M., Abid, H., Sadoun, A., Chaouche, A.C.: Optoelectronic properties of aluminum bismuth antimony ternary alloys for optical telecommunication applications: first principles calculation. Comput. Mater. Sci. 155, 224–234 (2018)

    CAS  Google Scholar 

  • Bennett, B.R., Magno, R., Boos, J.B., Kruppa, W., Ancona, M.G.: Antimonide-based compound semiconductors for electronic devices: a review. Solid-State Electron. 49, 1875–1895 (2005)

    CAS  ADS  Google Scholar 

  • Bennett, B.R., Boos, J.B., Ancona, M.G., Papanicolaou, N.A., Cooke, G.A., Kheyrandish, H.: InAlSb/InAs/AlGaSb quantum well heterostructures for high-electron-mobility transistors. J. Electron. Mater. 36, 99–104 (2007)

    CAS  ADS  Google Scholar 

  • Bentayeb, A., Khodja, F.D., Chibani, S., Marbouh, N., Bekki, B., Khalfallah, B., Elkeurti, M.: Structural, electronic, and optical properties of AlNxSb1−x alloys through TB–mBJ–PBEsol: DFT study. J. Comput. Electron. 18, 791–801 (2019)

    CAS  Google Scholar 

  • Bhattacharjee, R., Chattopadhyaya, S.: Effects of doping of calcium atom(s) on structural, electronic and optical properties of binary strontium chalcogenides-a theoretical investigation using DFT based FP-LAPW methodology. Solid State Sci. 71, 92–110 (2017)

    CAS  ADS  Google Scholar 

  • Blaha, P., Schwarz, K., Madsen, G.K.H., Kvasnicka, D., Luitz, J.: WIEN2k, An Augmented Plane Wave Plus Local Orbitals Program for Calculating Crystal Properties. Vienna University of Technology, Vienna (2001)

    Google Scholar 

  • Blanco, M.A., Pendás, A.M., Francisco, E., Recio, J.M., Franco, R.: Thermodynamical properties of solids from microscopic theory: applications to MgF2 and Al2O3. J. Mol. Struct. Theochem. 368, 245–255 (1996)

    CAS  Google Scholar 

  • Blanco, M.A., Francisco, E., Luaña, V.: GIBBS: isothermal-isobaric thermodynamics of solids from energy curves using a quasi-harmonic Debye model. Comput. Phys. Commun. 158, 57–72 (2004)

    CAS  ADS  Google Scholar 

  • Born, M., Huang, K.: Dynamical Theory of Crystal Lattices. Oxford University Press, Oxford (1998)

    Google Scholar 

  • Börnstein, L.: Numerical data and functional relationships in science and technology. In: Semiconductors: Physics of Group IV Elements and III-V Compounds, New Series, p. 17 (1982)

  • Bouarissa, N., Algarni, H., Khan, M.A.: Positron chemical potential and diffusion constant in AlSb crystal compound under compression. J. Electron Spectrosc. Relat. Phenom. 245, 147010 (2020)

    CAS  Google Scholar 

  • Boubendira, K., Bendaif, S., Nemiri, O., Boumaza, A., Meradji, H., Ghemid, S., El Haj Hassan, F.: Fundamental properties of zinc-blende AlSb, BSb and their Al1−xBxSb ternary alloy. Chin. J. Phys. 55, 1092–1102 (2017)

    CAS  Google Scholar 

  • Boumaza, A., Ghemid, S., Chouahda, Z., Meradji, H., El Haj Hassan, F.: First-principles calculations of the structural, electronic, elastic, phase diagram and thermal properties of Zn1−xBexTe ternary alloy. Phys. Scr. 86, 035703 (2012)

    ADS  Google Scholar 

  • Brik, M.G.: First-principles calculations of electronic, optical and elastic properties of ZnAl2S4 and ZnGa2O4. J. Phys. Chem. Solids 71, 1435–1442 (2010)

    CAS  ADS  Google Scholar 

  • Chen, H., Heremans, J.J., Peters, J.A., Goel, N., Chung, S.J., Santos, M.B.: Ballistic transport in InSb∕InAlSb antidot lattices. Appl. Phys. Lett. 84, 5380–5382 (2004)

    CAS  ADS  Google Scholar 

  • Chen, X.Q., Niu, H., Li, D., Li, Y.: Modeling hardness of polycrystalline materials and bulk metallic glasses. Intermetallics 19, 1275–1281 (2011)

    CAS  Google Scholar 

  • Cohen, M.L.: Calculation of bulk moduli of diamond and zinc-blende solids. Phys. Rev. B 32, 7988 (1985)

    CAS  ADS  Google Scholar 

  • Cottenier, S.: DFT and the family of (L) APW-methods: a step-by-step introduction, K.U. Leuven. http://www.wien2k.at/reg_user/textbooks (2002)

  • Debye, P.: Zur theorie der spezifischen Wärmen. Ann. Phys. 344, 789–839 (1912)

    Google Scholar 

  • Degheidy, A.R., Elkenany, E.B., Madkour, M.A.K., AbuAli, A.M.: Temperature dependence of phonons and related crystal properties in InAs, InP and InSb zinc-blende binary compounds. Comput. Condens. Matter 16, e00308 (2018)

    Google Scholar 

  • Demir, H.V., Nizamoglu, S., Erdem, T., Mutlugun, E., Gaponik, N., Eychmüller, A.: Quantum dot integrated LEDs using photonic and excitonic color conversion. Nano Today 6, 632–647 (2011)

    CAS  Google Scholar 

  • Diware, M.S., Kim, T.J., Yoon, J.J., Barange, N.S., Byun, J.S., Park, H.G., Kim, Y.D., Shin, S.H., Song, J.D.: Dielectric functions of In1−xAlxSb alloys for arbitrary compositions with parametric modeling. Thin Solid Films 546, 26–30 (2013)

    CAS  ADS  Google Scholar 

  • El Haj Hassan, F., Akbarzadeh, H.: First-principles investigation of BNxP1−x, BNxAs1−x and BPxAs1−x ternary alloys. Mater. Sci. Eng. B 121, 170–177 (2005)

    Google Scholar 

  • El-HoudaFares, N., Bouarissa, N.: Positron afinity, deformation potential and diffusion constant in AlxIn1−xSb ternary semiconductor alloys. Acta Metall. Sin. (engl. Lett.) 29, 661–667 (2016)

    Google Scholar 

  • Fang, Z.M., Ma, K.Y., Jaw, D.H., Cohen, R.M., Stringfellow, G.B.: Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy. J. Appl. Phys. 67, 7034–7039 (1990)

    CAS  ADS  Google Scholar 

  • Flórez, M., Recio, J.M., Francisco, E., Blanco, M.A., Pendás, A.M.: First-principles study of the rocksalt–cesium chloride relative phase stability in alkali halides. Phys. Rev. B 66, 144112 (2002)

    ADS  Google Scholar 

  • Frantsevich, I.N., Voronov, F.F., Bokuta, S.A.: Elastic Constants, and Elastic Moduli of Metals and Insulators Handbook, p. 60. NaukovaDumka, Kiev, Ukraine (1983)

  • Gagui, S., Ghemid, S., Meradji, H., Zaidi, B., Amimour, B., Tahir, S.A., Ahmed, R., Chouial, B., Hadjoudja, B., Kushwaha, A.K.: Ab-initio study on the phase transition, elastic, optoelectronic, and thermodynamic properties of GaAs1-xSbx. Optik 219, 165253 (2020)

    CAS  ADS  Google Scholar 

  • Gagui, S., Ghemid, S., Meradji, H., Zaidi, B., Tahir, S.A., Ahmed, R., Kushwaha, A.K., Hadjoudja, B., Chouial, B.: Tailoring of elastic, optoelectronic, and thermal properties of antimony doped indium phosphorus alloys for optoelectronic applications. J. Alloys Compd. 858, 157632 (2021)

    CAS  Google Scholar 

  • Giesecke, G., Pfister, H.: Präzisionsbestimmung der Gitterkonstanten von AIIIBv-Verbindungen. Acta Cryst. 11, 369–371 (1958)

    CAS  Google Scholar 

  • Glaser, E.R., Kennedy, T.A., Bennett, B.R., Shanabrook, B.V.: Strong emission from As monolayers in AlSb. Phys. Rev. B 59, 2240–2244 (1999)

    CAS  ADS  Google Scholar 

  • Gnezdilov, V.P., Lockwood, D.J., Webb, J.B., Maigné, P.: Raman scattering from In1−xAlxSb metastable epilayers. J. Appl. Phys. 74, 6883–6887 (1993)

    CAS  ADS  Google Scholar 

  • Gu, P., Tani, M., Kono, S., Sakai, K., Zhang, X.C.: Study of terahertz radiation from InAs and InSb. J. Appl. Phys. 91, 5533–5537 (2002)

    CAS  ADS  Google Scholar 

  • Hadi, M.A., Naqib, S.H., Christopoulos, S.R.G., Chronos, A., Islam, A.K.M.A.: Mechanical behavior, bonding nature and defect processes of Mo2ScAlC2: a new ordered MAX phase. J. Alloys Compd. 724, 1167–1175 (2017a)

    CAS  Google Scholar 

  • Hadi, M.A., Roknuzzaman, M., Chroneos, A., Naqib, S.H., Islam, A.K.M.A., Vovk, R.V., Ostrikov, K.: Elastic and thermodynamic properties of new (Zr3−xTix)AlC2 MAX-phase solid solutions. Comput. Mater. Sci. 137, 318–326 (2017b)

    CAS  Google Scholar 

  • Han, M., Jalali, H.B., Yildiz, E., Qureshi, M.H., Şahin, A., Nizamoglu, S.: Photovoltaic neurointerface based on aluminum antimonide nanocrystals. Commun. Mater. 2, 1–10 (2021)

    Google Scholar 

  • Harbeke, G.: In Abelès, F. (ed.) Optical Properties of Solids. North-Holland, Amsterdam (1972)

  • Hervé, P., Vandamme, L.K.J.: General relation between refractive index and energy gap in semiconductors. Infrared Phys. Technol. 35, 609–615 (1994)

    ADS  Google Scholar 

  • Hill, R.: Elastic properties of reinforced solids: some theoretical principles. J. Mech. Phys. Solids 11, 357–372 (1963)

    ADS  Google Scholar 

  • Hnida, K.E., Marzec, M., Wlaźlak, E., Chlebda, D., Szaciłowski, K., Gilek, D., Sulka, G.D., Przybylski, M.: Influence of pulse frequency on physicochemical properties of InSb films obtained via electrodeposition. Electrochim. Acta 304, 396–404 (2019)

    CAS  Google Scholar 

  • Jalali, H.B., Aria, M.M., Dikbas, U.M., Sadeghi, S., Kumar, B.G., Sahin, M., Kavakli, I.H., Ow-Yang, C.W., Nizamoglu, S.: Effective neural photostimulation using Indium-based type-II quantum dots. ACS Nano 12, 8104–8114 (2018)

    Google Scholar 

  • Jamal, M., Asadabadi, S.J., Ahmad, I., Aliabad, H.A.R.: Elastic constants of cubic crystals. Comput. Mater. Sci. 95, 592–599 (2014)

    CAS  Google Scholar 

  • Johnson, M., Bennett, B.R., Yang, M.J., Miller, M.M., Shanabrook, B.V.: Hybrid Hall effect device. Appl. Phys. Lett. 71, 974–976 (1997)

    CAS  ADS  Google Scholar 

  • Karatum, O., Jalali, H.B., Sadeghi, S., Melikov, R., Srivastava, S.B., Nizamoglu, S.: Light-emitting devices based on type-II InP/ZnO quantum dots. ACS Photonics 6, 939–946 (2019)

    CAS  Google Scholar 

  • Kim, S.W., Zimmer, J.P., Ohnishi, S., Tracy, J.B., Frangioni, J.V., Bawendi, M.G.: Engineering InAs(x)P(1–x)/InP/ZnSe III-V alloyed core/shell quantum dots for the near-infrared. J. Am. Chem. Soc. 127, 10526–10532 (2005)

    CAS  PubMed  Google Scholar 

  • Kim, Y.H., Lee, J.Y., Noh, Y.G., Kim, M.D., Kwon, Y.J., Oh, J.E.: Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: temperature and V/III flux ratio dependences. J. Cryst. Growth 296, 75–80 (2006)

    CAS  ADS  Google Scholar 

  • Kumar, B.G., Sadeghi, S., Melikov, R., Aria, M.M., Jalali, H.B., Ow-Yang, C.W., Nizamoglu, S.: Structural control of InP/ZnS core/shell quantum dots enables high-quality white LEDs. Nano Technol. 29, 345605 (2018)

    Google Scholar 

  • Kushwaha, A.K.: Lattice dynamical, elastic and thermodynamical properties of III–V Semiconductor AlSb, GaSb and Their Mixed Semiconductor Ga1-xAlxSb. Int. J. Thermophys. 38, 98 (2017)

    ADS  Google Scholar 

  • Maigné, P., Lockwood, D.J., Webb, J.B.: Strain relaxation in InAlSb epilayers grown on InSb substrates. Appl. Phys. Lett. 65, 1543–1545 (1994)

    ADS  Google Scholar 

  • Massidda, S., Continenza, A., Freeman, A.J., de Pascale, T.M., Meloni, F., Serra, M.: Structural and electronic properties of narrow-band-gap semiconductors: InP, InAs, and InSb. Phys. Rev. B 41, 12079–12085 (1990)

    CAS  ADS  Google Scholar 

  • Mirmoosa, M.S., Omelyanovich, M., Simovski, C.R.: Microgap thermophotovoltaic systems with low emission temperature and high electric output. J. Opt. 18, 115104 (2016)

    ADS  Google Scholar 

  • Moss, T.S.: A relationship between the refractive iIndex and the infra-red threshold of sensitivity for photoconductors. Proc. Phys. Soc. Lond. B 63, 167 (1950)

    ADS  Google Scholar 

  • Mouhat, F., Coudert, F.X.: Necessary and sufficient elastic stability conditions in various crystal systems. Phys. Rev. B 90, 224104 (2014)

    ADS  Google Scholar 

  • Moussa, R., Abdiche, A., Khenata, R., Soyalp, F.: First principles calculation of the structural, electronic, optical and elastic properties of the cubic AlxGa1−xSb ternary alloy. Opt. Mater. 113, 110850 (2021)

    CAS  Google Scholar 

  • Murnaghan, F.D.: The compressibility of media under extreme pressures. Proc. Natl. Acad. Sci. u.s.a. 30, 244–247 (1944)

    MathSciNet  CAS  PubMed  PubMed Central  ADS  Google Scholar 

  • Nabi, S., Anwar, A.W., Wazir, Z., Hayat, S.S., Ahmad, M., Tayyab, M., Nabi, K., Shamoil, M., Khan, A.A., Khan, B.S.: Correlation between structural, electronic, and optical response of Ga-doped AlSb for optoelectronic applications: a first principle study. Eur. Phys. J. b. 95, 55 (2022)

    CAS  ADS  Google Scholar 

  • Penn, D.R.: Wave-number-dependent dielectric function of semiconductors. Phys. Rev. 128, 2093 (1962)

    CAS  ADS  Google Scholar 

  • Petit, A.T., Dulong, P.L.: Recherches sur quelques points importants de la théorie de la chaleur. Ann. Chem. Phys. 10, 395–413 (1819)

    Google Scholar 

  • Pettifor, D.G.: Theoretical predictions of structure and related properties of intermetallics. Mater. Sci. Technol. 8, 345–349 (1992)

    CAS  ADS  Google Scholar 

  • Poirier, J.P.: Introduction to the Physics of the Earth’s Interior, p. 39. Cambridge University Press, Oxford (2000)

    Google Scholar 

  • Pugh, S.F.: XCII. Relations between the elastic moduli and the plastic properties of polycrystalline pure metals. Lond. Edinb. Dublin Philos. Mag. J. Sci. 45, 823–843 (1954)

    CAS  Google Scholar 

  • Qiu, Y., Uhl, D., Keo, S.: Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate. Appl. Phys. Lett. 84, 263–265 (2004)

    CAS  ADS  Google Scholar 

  • Ravindra, N.M., Auluck, S., Srivastava, V.K.: On the penn gap in semiconductors. Phys. Status Solidi B 93, K155–K160 (1979)

    CAS  ADS  Google Scholar 

  • Reddy, R.R., Ahammed, Y.N., Gopal, K.R., Raghuram, D.V.: Optical electronegativity and refractive index of materials. Opt. Mater. 10, 95–100 (1998)

    CAS  ADS  Google Scholar 

  • Reuss, A., Angew, Z.: Calculation of the flow limits of mixed crystals on the basis of the plasticity of monocrystals. Math. Mech. 9, 49–58 (1929)

    CAS  Google Scholar 

  • Robertson, M.D., Corbett, J.M., Webb, J.B.: Transmission electron microscopy characterization of InAlSb/InSb bilayers and superlattices. Micron 28, 175–183 (1997)

    CAS  Google Scholar 

  • Sadeghi, S., Kumar, B.G., Melikov, R., Aria, M.M., Jalali, H.B., Nizamoglu, S.: Quantum dot white LEDs with high luminous efficiency. Optica 5, 793–802 (2018a)

    CAS  ADS  Google Scholar 

  • Sadeghi, S., Jalali, H.B., Melikov, R., Kumar, B.G., Aria, M.M., Ow-Yang, C.W., Nizamoglu, S.: Stokes shift engineered Indium Phosphide quantum dots for efficient luminescent solar concentrators. ACS Appl. Mater. Interfaces 10, 12975–12982 (2018b)

    CAS  PubMed  PubMed Central  Google Scholar 

  • Saeidi, P., Kaviyani, M.H.S., Yalameha, S.: The structural and elastic properties of InSb1−xBix alloys. Comput. Condens. Matter 18, e00358 (2019)

    Google Scholar 

  • Salehi, H., Badehian, H.A., Farbod, M.: First principle study of the physical properties of semiconducting binary antimonide compounds under hydrostatic pressures. Mater. Sci. Semicond. Process. 26, 477–490 (2014)

    CAS  Google Scholar 

  • Salmi, L., Meradji, H., Ghemid, S., Nemiri, O., Oumelaz, F., Khenata, R.: Phase stability, pressure-induced phase transition and electronic properties of AlX (X = P, As and Sb) compounds from first principle calculations. Phase Transit. 93, 843–855 (2020)

    CAS  Google Scholar 

  • Schwartz, G.P., Gualtieri, G.J., Sunder, W.A., Farrow, L.A.: Light scattering from quantum confined and interface optical vibrational modes in strained-layer GaSb/A1Sb superlattices. Phys. Rev. B 36, 4868–4877 (1987)

    CAS  ADS  Google Scholar 

  • Silveirinha, M.G., Engheta, N.: Transformation electronics: tailoring the effective mass of electrons. Phys. Rev. B 86, 161104(R) (2012)

    ADS  Google Scholar 

  • Söderström, J.R., Yao, J.Y., Andersson, T.G.: Observation of resonant tunneling in InSb/AlInSb double-barrier structures. Appl. Phys. Lett. 58, 708–710 (1991)

    ADS  Google Scholar 

  • Soenen, S.J., Rivera-Gil, P., Montenegro, J.-M., Parak, W.J., De Smedt, S.C., Braeckmans, K.: Cellular toxicity of inorganic nanoparticles: common aspects and guidelines for improved nanotoxicity evaluation. Nano Today 6, 446–465 (2011)

    CAS  Google Scholar 

  • Syme, R.W.G., Lockwoad, D.J., Labbé, H.J., Webb, J.B.: Resonance raman study of folded acoustic modes in strained InSb/Inl−xAlxSb superlattices. J. Raman Spectrosc. 27, 217–223 (1996)

    CAS  ADS  Google Scholar 

  • Teter, D.: Computational alchemy: the search for new superhard materials. MRS Bull. 23, 22–27 (1998)

    CAS  Google Scholar 

  • Touam, S., Mounis, N., Boumaza, A., Ghemid, S., Meradji, H., Khenata, R., Bin Omran, S., Badi, N., Kushwaha, A.K.: Phosphide in gallium bismuth: structural, electronic, elastic, and optical properties of GaPxBi1−x alloys. J. Mol. Model. 28, 182 (2022)

    CAS  PubMed  Google Scholar 

  • Tran, F., Blaha, P.: Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential. Phys. Rev. Lett. 102, 226401 (2009)

    PubMed  ADS  Google Scholar 

  • Tyschenko, I.E., Volodin, V.A., Cherkov, A.G., Stoffel, M., Rinnert, H., Vergnat, M., Popov, V.P.: Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers. J. Lumin. 204, 656–662 (2018)

    CAS  Google Scholar 

  • Varshney, D., Joshi, G., Varshney, M., Shriya, S.: Pressure induced structural phase transition and elastic properties in BSb, AlSb, GaSb and InSb compounds. Phys. B Condens. Matter 405, 1663–1676 (2010)

    CAS  ADS  Google Scholar 

  • Vegard, L.: Die Konstitution der Mischkristalle und die Raumfüllung der Atome. Z. Phys. 5, 17–26 (1921)

    CAS  ADS  Google Scholar 

  • Voigt, W.: Lehrbuch der Kristallphysik. B.G. Teubner, Leipzig (1928)

    Google Scholar 

  • Vurgaftman, I., Meyer, J.R., Ram-Mohan, L.R.: Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2001)

    CAS  ADS  Google Scholar 

  • Walrod, D., Auyang, S.Y., Wolff, P.A., Tsang, W.: Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices. Appl. Phys. Lett. 56, 218–220 (1990)

    CAS  ADS  Google Scholar 

  • Wang, Z.H., Wang, C.Y.: Aluminum Indium antimonide (AlxIn1−xSb) ternary nanowires synthesis and characterization. In: Meet. Abstr. MA2018–01, p. 2622 (2018)

  • Weaver, B.D., Boos, J.B., Papanicolaou, N.A., Bennett, B.R., Park, D., Bass, R.: High radiation tolerance of InAs/AlSb high-electron-mobility transistors. Appl. Phys. Lett. 87, 173501–173504 (2005)

    ADS  Google Scholar 

  • Webb, J.B., Yousefi, G.H., Rousina, R.: InSb/In1−xAlxSb strained-layer superlattices grown by magnetron sputter epitaxy. Appl. Phys. Lett. 60, 998–1000 (1992)

    CAS  ADS  Google Scholar 

  • Webb, J.B., Lockwood, D.J., Gnezdilov, V.P.: Magnetron sputter epitaxy and characterization of InSb/In1−xAlxSb strained layer superlattices. J. Cryst. Growrh 137, 405–414 (1994)

    CAS  ADS  Google Scholar 

  • Weber, M.J. (ed.): Handbook of Optical Materials. Springer, Berlin (2003)

    Google Scholar 

  • Wei, S.H., Zunger, A.: Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: chemical trends. Phys. Rev. B 60, 5404–5411 (1999)

    CAS  ADS  Google Scholar 

  • Weil, R.: Correction to the elastic constants of AISb. J. Appl. Phys. 43, 4271 (1972)

    ADS  Google Scholar 

  • Wu, Z., Cohen, R.E.: More accurate generalized gradient approximation for solids. Phys. Rev. B 73, 235116 (2006)

    ADS  Google Scholar 

  • Yaemsunthorn, K., Thongtem, T., Thongtem, S., Randorn, C.: Synthesis of InSb nanocrystals in an air atmosphere and their photocatalytic activity from near-infrared to ultra-violet. Mater. Sci. Semicond. Process. 68, 53–57 (2017)

    CAS  Google Scholar 

  • Yavorskiy, D., Karpierz, K., Grynberg, M., Knap, W., Łusakowski, J.: Indium antimonide detector for spectral characterization of terahertz sources. J. Appl. Phys. 123, 064502 (2018)

    ADS  Google Scholar 

  • Yeon, S.S., Daeho, L., Jaehyun, H., Il Tae, K.: Facile synthesis of aluminum-antimony alloys and their application for lithium-ion and sodium-ion storage. J. Nanosci. Nanotechnol. 17, 7575–7578 (2017)

    Google Scholar 

  • Yi, W., Kiselev, A.A., Thorp, J., Noah, R., Nguyen, B.-M., Bui, S., Rajavel, R.D., Hussain, T., Gyure, M.F., Kratz, P., Qian, Q., Manfra, M.J., Pribiag, V.S., Kouwenhoven, L.P., Marcus, C.M., Sokolich, M.: Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures. Appl. Phys. Lett. 106, 142103–142108 (2015)

    ADS  Google Scholar 

Download references

Acknowledgements

The authors acknowledge the financial Support of the General Direction of Scientific Research and Technological Development (DGRSDT).

Funding

The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

Author information

Authors and Affiliations

  1. Département des Sciences de La Matière, Université Larbi Ben M’Hidi, Oum El Bouaghi, Algeria

    S. Gagui

  2. Laboratory of Semiconductors, Department of Physics, University of Badji-Mokhtar, Annaba, Algeria

    S. Gagui

  3. Laboratoire de Physique des Rayonnements, Université Badji Mokhtar, Annaba, Algeria

    S. Ghemid & H. Meradji

  4. Centre for High Energy Physics, Quaid-e-Azam Campus, University of the Punjab, Lahore, 54590, Pakistan

    Muhammad Anjum Javed & R. Ahmed

  5. Faculty of Science Education, Jeju National University, Jeju, 63243, Republic of Korea

    Bakhtiar Ul Haq

  6. Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM, 81310, Skudai, Johor, Malaysia

    R. Ahmed

  7. Laboratoire d’Etude des Matériaux et Instrumentations Optiques (LEMIO), Université Djillali Liabès de Sidi Bel-Abbès, 22000, Sidi Bel-Abbès, Algeria

    N. Baki

Authors
  1. S. Gagui
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. Ghemid
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Meradji
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Muhammad Anjum Javed
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Bakhtiar Ul Haq
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. R. Ahmed
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. N. Baki
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

All authors contributed to the study conception and design. Data collection and analysis were performed by [Gagui], [Ghemid], [Meradji] and [Ahmed]. The first draft of the manuscript was written by [Meradji] [Ahmed], [Ul Haq] and all authors commented on previous versions of the manuscript. [Anjum Javed] [Ahmed]and [Baki] Supervising, Reviewing and Editing. All authors read and approved the final manuscript.

Corresponding authors

Correspondence to S. Gagui or R. Ahmed.

Ethics declarations

Ethics approval

All authors approve the ethics.

Consent to participate

All the authors agree to participate in this investigation.

Consent for publication

All authors give their consent for publication.

Competing interests

The authors declare no competing interests.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Supplementary Information

Below is the link to the electronic supplementary material.

Supplementary file1 (DOCX 2851 kb)

Rights and permissions

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gagui, S., Ghemid, S., Meradji, H. et al. Aluminium doping effects on physical properties of semiconductors InSb for optoelectronic devices: a computational insight. Opt Quant Electron 56, 87 (2024). https://doi.org/10.1007/s11082-023-05637-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11082-023-05637-4

Keywords

Search

Navigation