Abstract
We propose a novel structure for the Esaki tunnel diode that utilizes a quantum well in order to increase the peak-to-valley current ratio. The quantum well is formed by sandwiching a thin layer of GaP between the Si and Ge layers, which creates a potential barrier for carriers. The quantum well enhances the tunneling probability of carriers, resulting in a higher peak current while the valley current remains low; which in total results in a superior peak-to-valley current ratio. We achieve a peak-to-valley current ratio significantly higher than those of conventional heterojunction structures, almost 3.8 fold of them. We use ATLAS TCAD for simulations, which can accurately calculate band-to-band tunneling current.
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RNB: Conceptualization, Writing -original draft, Software. AA: Supervision—review & editing. AAO: Review & editing, Software.
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Bayat, R.N., Abbasi, A. & Orouji, A.A. Superior peak-to-valley current ratio in Esaki diode by utilizing a quantum well. Opt Quant Electron 56, 37 (2024). https://doi.org/10.1007/s11082-023-05632-9
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DOI: https://doi.org/10.1007/s11082-023-05632-9