Abstract
The optical, mechanical, and lattice dynamic properties of nanostructured GaSb semiconductor have been determined. The influence of pressure on the Longitudinal and transversal sound velocities, reflectivity, phonon frequencies, micro-hardness, and the transverse effective charge has been investigated. The dependencies of bond-stretching force constant, bond-bending force constant, susceptibility, Cauchy ratio, Born ratio, effective charge, and ionicity on the pressure of zinc-blende GaSb semiconductor are also been studied. The calculations in the present work have been performed using the pseudo-potential method (EPM). Comparisons with the available experiment and other works show reasonable agreement. The studied properties of the considered material could be useful in optoelectronic applications.
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This work was supported and funded by the Deanship of Scientific Research at Imam Mohammad Ibn Saud Islamic University (IMSIU) (grant number IMSIU-RG23133).
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Monira: Conceptualization, Investigation. Fatima: Resources, Visualization. Babiker: Resources, Visualization. Abdelghany: Resources, Data curation. Elkenany: Visualization, Methodology, Writing original manuscript.
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Ghoniem, M.G., Adam, F.A., Abdulkhair, B.Y. et al. Lattice dynamic, optical, and mechanical properties of nanostructured gallium antimonide (GaSb) semiconductor under the effect of pressure. Opt Quant Electron 55, 1162 (2023). https://doi.org/10.1007/s11082-023-05421-4
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DOI: https://doi.org/10.1007/s11082-023-05421-4