Abstract
In this work, the effect of SCH width on the modulation and distortion characteristics of tunnel injection transistor laserare analyzed. The rate equations of transistor laser are numerically solved using fourth order Runge Kutta method and the threshold current is found to reduce for increase in SCH width, in case of narrow SCH layer. A maximum modulation bandwidth of 21.8 GHz is predicted for aSCH width of 21 nm. However, at SCH width of 30 nm, a modulation depth of 0.44 is obtained, which is maximumcompared to other SCH widths. A minimum third order intermodulation distortion of − 39.6 dBc is obtained for SCH width of 21 nm. Further, anSFDR value of 79.6 dB Hz2/3 is observedfor the same width. Hence 21 nm SCH width is identified as an optimum value, which leads to minimum distortion and maximum bandwidth, for the TI-TL structure considered in this work.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Afsari, A., De Souza, P., Abbosh, A., Rahmat-Samii, Y.: Transistor laser antenna: electromagnetic model in transmit and receive modes. IEEE Access 10, 77498–77509 (2022). https://doi.org/10.1109/ACCESS.2022.3193379
Chen, Y., Wartak, M.S., Lu, H., Makino, T.: Investigation of carrier transport effects in multiquantumwell lasers. J. Appl. Phys. 78, 5515 (1995). https://doi.org/10.1063/1.359669
Cox, C.H., Ackerman, E.I., Betts, G.E., Prince, J.L.: Limits on the performance of RF over fiber links and their impact on device design. IEEE Trans. Microw. Theory Tech. 54, 906–920 (2006). https://doi.org/10.1109/TMTT.2005.863818
Davenport, M.L., Skendzic, S., Volet, N., Hulme, J.C., Heck, M.J.R., Bowers, J.E.: Heterogeneous Silicon/III–V semiconductor optical amplifiers. IEEE J. Sel. Top. Quant. Electr. 22(6), 78–88 (2016). https://doi.org/10.1109/JSTQE.2016.2593103
Fan, L., Jia, P., Lei, Y., Cui, Q., Chen, Y., Qin, L., Liang, L., Qiu, C., Song, Y., Wang, Y., Ning, Y., Wang, L.: Modulation characteristics of high-speed transistor lasers. Appl. Sci. 12, 4475 (2022). https://doi.org/10.3390/app12094475
Faraji, B., Shi, W., Pulfrey, D.L., Chrostowski, L.: Analytical modeling of the transistor laser. IEEE J. Sel. Top. Quantum Electron. 15(3), 594–603 (2009). https://doi.org/10.1109/JSTQE.2009.201378
Fernando, X.N.: Radio Over Fiber for Wireless Communications: From Fundamentals to Advanced Topics. John Wiley and Sons, United Kingdom (2014)
Holonyak, N., Jr., Feng, M.: The transistor laser. IEEE Spectr. 43, 50–55 (2006). https://doi.org/10.1109/MSPEC.2006.1584362
Hosseini, M., Kaatuzian, H., Taghavi, I.: Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures. Chin. Opt. Lett. 15(6), 062501 (2017). https://doi.org/10.3788/COL201715.062501
Kaur, J., Basu, R., Sharma, A.K.: Effect of separate confinement heterostructure in tunnel injection transistor laser based transmitter for high speed optical communication networks. Opt. Laser Technol. 115, 268–279 (2019). https://doi.org/10.1016/j.optlastec.2019.02.038
Kaur, J., Basu, R., Sharma, A.K.: Performance analysis of nitride-based tunnel-injection transistor laser. J. Russ. Laser Res. 43, 361–369 (2022). https://doi.org/10.1007/s10946-022-10060-3
Kucharczyk, M., Wartak, M.S., Weetman, P., Lau, P.K.: Theoritical modeling of multiple quantum well lasers with tunneling injection and tunneling transport between quantum wells. J. Appl. Phys. 86, 3218 (1999). https://doi.org/10.1063/1.371193
Kumar, N., Mukhopadhyay, B., Basu, R.: Tunnel injection transistor laser for optical interconnects. Opt. Quant. Electron 50, 160 (2018). https://doi.org/10.1007/s11082-018-1412-5
Piramasubramanian, S., Ganesh Madhan, M.: A novel distortion reduction scheme for multiple quantum well gain lever laser diodes. J. Opt. 15, 055501 (2013). https://doi.org/10.1088/2040-8978/15/5/055501
Piramasubramanian, S., Ganesh Madhan, M., Nagella, J., Dhanapriya, G.: Numerical analysis of distortion characteristics of heterojunction bipolar transistor laser. Opt. Commun. 357, 177–184 (2015). https://doi.org/10.1016/j.optcom.2015.08.086
Piramasubramanian, S., Ganesh Madhan, M., Radha, V., Shajithaparveen, S.M.S., Nivetha, G.: Effect of quantum well position on the distortion characteristics of transistor laser. Opt. Commun. 414, 177–184 (2018). https://doi.org/10.1016/j.optcom.2017.12.055
Ranjith, R., Piramasubramanian, S., Ganesh Madhan, M.: Numerical simulation and analysis of dual base transistor laser. Microw. Opt. Technol. Lett. 64, 33186 (2022). https://doi.org/10.1002/mop.33186
R. Ranjith, S. Piramasubramanian, M. Ganesh Madhan (2017) Distortion analysis of 1.3 µm AlGaInAs/InP transistor laser, Advances in Optical Science and Engineering. Springer Proceedings in Physics, Vol. 194. Springer, Singapore DOI: https://doi.org/10.1007/978-981-10-3908-9_52.
Shirao, M., Lee, S., Nishiyama, N., Arai, S.: Large signal analysis of a transistor laser. IEEE J. Quantum Electron. 47(3), 359–367 (2011). https://doi.org/10.1109/JQE.2010.2090341
Then, H.W., Tan, F., Feng, M., Holonyak, N., Jr.: Transistor laser optical and electrical linearity enhancement with collector current feedback. Appl. Phys. Lett. 100, 21104 (2012). https://doi.org/10.1063/1.4723874
Then, H.W., Feng, M., Holonyak, N., Jr.: The transistor laser: theory and experiment. Proc. IEEE 101, 2271–2298 (2013). https://doi.org/10.1109/JPROC2013.2274935
Vinodhini, S.V., Piramasubramanian, S., Madhan, M.G.: Analysis of distortion reduction in tunnel injection transistor laser using feedback Schottky diode. Opt. Quant. Electron 54, 364 (2022). https://doi.org/10.1007/s11082-022-03746-0
Vinodhini, S.V., Piramasubramanian, S.: Effect of tunneling probability on the distortion characteristics of tunnel injection transistor laser. Opt. Commun. 460, 125127 (2020). https://doi.org/10.1016/j.optcom.2019.125127
Vinodhini, S.V., Piramasubramanian, S., Ganesh Madhan, M.: Analysis of nonlinear distortion and its reduction using feedback injection schemes in 13 µm transistor laser. Opt. Commun. 439, 224–232 (2019). https://doi.org/10.1016/j.optcom.2019.01.065
Weetman, P., Wartak, M.S., Rusek, P.: Comparison of classical and tunneling injection schemes in quantum well lasers. IEEE Photonics Tech. Lett. 10(5), 669227 (1998). https://doi.org/10.1109/68.669227
Funding
The authors gratefully acknowledge Anna University, Chennai for providing financial support to carry out this research work under Anna Centenary Research Fellowship (ACRF) scheme. One of the authors, S.V.V. is thankful to Anna University, Chennai for the award of Anna Centenary Research Fellowship [G.N.: CFR/ACRF/2018/34].
Author information
Authors and Affiliations
Contributions
S.V.V.—numerical simulation and overall alignment of research paper. S.P.—interpretation of results and overall correction of research work. M.G.M.—overall suggestions of the research work.
Corresponding author
Ethics declarations
Competing interests
The authors declare no competing interests.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Vinodhini, S.V., Piramasubramanian, S. & Ganesh Madhan, M. Investigations on the effect of separate confinement heterostructure width on the distortion performance of tunnel injection based transistor laser. Opt Quant Electron 55, 809 (2023). https://doi.org/10.1007/s11082-023-05076-1
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-023-05076-1