Abstract
We explored a lead-free, stable and inorganic perovskite absorber RbSn0.5Ge0.5I3 for photovoltaic application. The stability in RbSn0.5Ge0.5I3 is due to the passivation effect of Ge at the mixed Sn-Ge B site the absorber. A detailed analysis of extrinsic losses is performed theoretically by utilizing the optical and electrical characteristics of the RbSn0.5Ge0.5I3 system. Evaluation of various recombination regimes has provided a performance ceiling limit and correspondingly an optimal device design. We summarised the extent of spectrum (thermalization and non-absorption) losses and extrinsic (resistance and Shockley–Read–Hall (SRH) limited) losses in RbSn0.5Ge0.5I3. Finally, an efficiency waterfall chart summarises the RbSn0.5Ge0.5I3 efficiency for different extrinsic loss regimes. Results summarized in this study are expected to stimulate experimentalists in this field to fabricate a stable lead-free highly efficient perovskite solar cell.
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AK highly acknowledge Prof. Marc Burgelman for SCAPS software.
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SG, JS & JS performed simulations, MK, SJR prepared initial draft, AK conceptualised and prepared final draft.
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Gomathi, S., Sivapriya, J., Kalaiyarasi, M. et al. Analysing the performance ceiling of RbSnGeI3-based lead-free stable perovskite solar cell. Opt Quant Electron 55, 734 (2023). https://doi.org/10.1007/s11082-023-04980-w
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DOI: https://doi.org/10.1007/s11082-023-04980-w