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Pressure-dependent mechanical properties, optical phonon frequencies, and acoustic velocity of the gallium arsenide semiconductor

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Abstract

The elastic constants, bulk modulus, shear modulus, Young’s modulus, optical phonon frequencies, and sound velocity for the zinc-blende GaAs have been determined. Furthermore, for the GaAs, the Poisson ratio, anisotropy factor, micro-hardness, and internal strain parameter have been estimated. It has been investigated how the examined features respond to pressure. Our findings are generally in agreement with experimental and theoretical values reported in the literature. Our findings at high-pressure levels could serve as a model for future experimental work. The knowledge gained from this study may be useful in the production of optoelectronic devices that operate under high pressure.

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  1. Applied Physics Department, Faculty of Science, Tafila Technical University, P. O. Box 179, Tafila, Jordan

    Ibtisam F. Al Maaitah

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  1. Ibtisam F. Al Maaitah
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Ibtisam F Al Maaitah wrote the main manuscript text. All authors reviewed the manuscript.

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Al Maaitah, I.F. Pressure-dependent mechanical properties, optical phonon frequencies, and acoustic velocity of the gallium arsenide semiconductor. Opt Quant Electron 55, 657 (2023). https://doi.org/10.1007/s11082-023-04931-5

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