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Enhancing the parameters of ZnO/CdZnS thin film photodetector by thermal annealing

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Abstract

This work aims to manufacture photodetectors from semiconducting bilayer materials of zinc oxide nanorods and coated with a thin layer of CdZnS by chemical bath deposition method. The effect of annealing time on the optical and electrical properties of the prepared devices and on the parameters of the devices was also studied. The prepared films were thermally treated by annealing at a temperature of 200 °C for several times for the purpose of comparison. The annealing times were 15, 30, 35, 60 min, respectively, by means of a vacuum furnace. The effect of the annealing time was noticeable and obvious on the optical and electrical properties of the manufactured photodetectors.

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Authors and Affiliations

  1. Department of Medical Physics, Hilla University College, Babylon, Iraq

    Kahtan A. Mohammed

  2. Department of Physics, Faculty of Science, Kufa University, Najaf, Iraq

    Hussein A. Alshamarti & Hadeel A. Jameel

  3. Pharmacy Department, Al-Mustaqbal University College, 51001, Hillah, Babil, Iraq

    Zahraa Falah Khudair

  4. Medical Laboratory Technology Department, College of Medical Technology, The Islamic University, Najaf, Iraq

    Rahman S. Zabibah

  5. Division of Research and Development, Lovely Professional University, Phagwara, India

    Kuldeep K. Saxena

  6. School of Mechanical Engineering, Lovely Professional University, Phagwara, India

    Kuldeep K. Saxena

Authors
  1. Kahtan A. Mohammed
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  2. Hussein A. Alshamarti
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  3. Hadeel A. Jameel
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  4. Zahraa Falah Khudair
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  5. Rahman S. Zabibah
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  6. Kuldeep K. Saxena
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Contributions

KAM and HAJ: write the manuscripts. HAA: prepare the figures and calculations. HAJ: review the manuscript.

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Correspondence to Kahtan A. Mohammed.

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Mohammed, K.A., Alshamarti, H.A., Jameel, H.A. et al. Enhancing the parameters of ZnO/CdZnS thin film photodetector by thermal annealing. Opt Quant Electron 55, 366 (2023). https://doi.org/10.1007/s11082-023-04642-x

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  • DOI: https://doi.org/10.1007/s11082-023-04642-x

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