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Ellipsometry study on silicon nitride film with uneven thickness distribution by plasma-enhanced chemical vapor deposition

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Abstract

As passivation layer and anti-reflection layer, silicon nitride (SiNx) thin film has been widely used in photovoltaic devices such as solar cells. The structure of SiNx film with uneven thickness distribution can make full use of different wavelengths of sunlight. In this paper, we have studied this structure for the first time. While introducing a quartz layer by plasma-enhanced chemical vapor deposition (PECVD), we obtained a thin SiNx film in the center and gradually thicker toward the edge. The effects of PECVD process parameters, including deposition time, RF power, dielectric layer thickness, etc. on the uneven thickness distribution of SiNx thin film are systematically studied. The film composition changing in the radial direction is also analyzed by spectroscopic ellipsometry and X-ray photoelectron spectroscopy. This study provides an instructive method for controlling the uneven thickness distribution of SiNx films and plays an important role in using this structure to the solar cell application.

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References

  • El Amrani, A., Menous, I., Mahiou, L., Tadjine, R., Touati, A., Lefgoum, A.: Silicon nitride film for solar cells. Renew. Energy 33, 2289 (2008)

    Article  Google Scholar 

  • Gardeniers, J.G.E., Tilmans, H.A.C., Visser, C.C.G.: LPCVD silicon-rich silicon nitride films for applications in micromechanics, studied with statistical experimental design. J. Vac. Sci. Technol. A 14, 2879 (1996)

    Article  Google Scholar 

  • Guler, I.: Optical and structural characterization of silicon nitride thin films deposited by PECVD. Mater. Sci. Eng. B Adv. Funct. Solid State Mater. 246, 21 (2019)

    Article  Google Scholar 

  • Habraken, F.H.P.M., Kuiper, A.E.T.: Silicon-nitride and oxynitride films. Mater. Sci. Eng. R Rep. 12, 123 (1994)

    Article  Google Scholar 

  • Kaushik, A., Kahn, H., Heuer, A.H.: Wafer-level mechanical characterization of silicon nitride MEMS. J. Microelectromech. Syst. 14, 359 (2005)

    Article  Google Scholar 

  • Kawamura, E., Wen, D.Q., Lieberman, M.A., Lichtenberg, A.J.: Effect of a dielectric layer on plasma uniformity in high frequency electronegative capacitive discharges. J. Vac. Sci. Technol. A 35, 05C311 (2017)

    Article  Google Scholar 

  • Kim, J.H., Chung, K.W.: Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering. J. Appl. Phys. 83, 5831 (1998)

    Article  ADS  Google Scholar 

  • Kishore, R., Singh, S.N., Das, B.K.: Screen printed titanium oxide and PECVD silicon nitride as antireflection coating on silicon solar cells. Renew. Energy 12, 131 (1997)

    Article  Google Scholar 

  • Kovacevic, G., Pivac, B.: Reactions in silicon-nitrogen plasma. Phys. Chem. Chem. Phys. 19, 3826 (2017)

    Article  Google Scholar 

  • Lee, E.G., Kim, J.H., Ko, H., Kim, C.Y.: The anti-reflection coating using the silicon nitride and silicon monoxide for InP based solar cells. J. Comput. Theor. Nanosci. 12, 871 (2015)

    Article  Google Scholar 

  • Lelievre, J.F., Kafle, B., Saint-Cast, P., Brunet, P., Magnan, R., Hernandez, E., Pouliquen, S., Massines, F.: Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells. Prog. Photovolt. 27, 1007 (2019)

    Article  Google Scholar 

  • Mandracci, P., Frascella, F., Rizzo, R., Virga, A., Rivolo, P., Descrovi, E., Giorgis, F.: Optical and structural properties of amorphous silicon-nitrides and silicon-oxycarbides: application of multilayer structures for the coupling of bloch surface waves. J. Non Cryst. Solids 453, 113 (2016)

    Article  ADS  Google Scholar 

  • Merle, B., Goken, M.: Fracture toughness of silicon nitride thin films of different thicknesses as measured by bulge tests. Acta Mater. 59, 1772 (2011)

    Article  ADS  Google Scholar 

  • Nowling, G.R., Babayan, S.E., Jankovic, V., Hicks, R.F.: Remote plasma-enhanced chemical vapour deposition of silicon nitride at atmospheric pressure. Plasma Sources Sci. Technol. 11, 97 (2002)

    Article  ADS  Google Scholar 

  • Richter, A., Benick, J., Feldmann, F., Fell, A., Hermle, M., Glunz, S.W.: N-type Si solar cells with passivating electron contact: identifying sources for efficiency limitations by wafer thickness and resistivity variation. Sol. Energy Mater. Sol. Cells 173, 96 (2017)

    Article  Google Scholar 

  • Riley, F.L.: Silicon nitride and related materials. J. Am. Ceram. Soc. 83, 245 (2000)

    Article  Google Scholar 

  • Seo, H., Sakai, T., Ohtake, H., Furuta, M.: Stacked organic photoconductive films and thin-film transistor circuits separated by thin silicon nitride for a color image sensor. In: 2014 IEEE Sensors 1672 (2014)

  • Signore, M.A., Sytchkova, A., Dimaio, D., Cappello, A., Rizzo, A.: Deposition of silicon nitride thin films by RF magnetron sputtering: a material and growth process study. Opt. Mater. 34, 632 (2012)

    Article  ADS  Google Scholar 

  • Smietana, M., Bock, W.J., Szmidt, J.: Evolution of optical properties with deposition time of silicon nitride and diamond-like carbon films deposited by radio-frequency plasma-enhanced chemical vapor deposition method. Thin Solid Films 519, 6339 (2011)

    Article  ADS  Google Scholar 

  • Tong, J., To, A., Lennon, A., Hoex, B.: Unintentional consequences of dual mode plasma reactors: implications for upscaling lab-record silicon surface passivation by silicon nitride. Jpn. J. Appl. Phys. 56, 08MB12 (2017)

    Article  Google Scholar 

  • Wan, Y., McIntosh, K.R., Thomson, A.F.: Characterisation and optimisation of PECVD SiNx as an antireflection coating and passivation layer for silicon solar cells. AIP Adv. 3, 032113 (2013)

    Article  ADS  Google Scholar 

  • Zhang, X., Ding, K., Yang, A., Shao, D.: Processing and characterisation of PECVD silicon nitride films. Adv. Mater. Opt. Electron. 6, 147 (1996)

    Article  ADS  Google Scholar 

  • Zhong, Z., Li, Z., Gao, Q., Li, Z., Peng, K., Li, L., Mokkapati, S., Vora, K., Wu, J., Zhang, G., Wang, Z., Fu, L., Tan, H.H., Jagadish, C.: Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating. Nano Energy 28, 106 (2016)

    Article  Google Scholar 

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Acknowledgements

This work was financially supported by the Science and Technology Department of Sichuan Province (2020YFG0042) and the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (kFJJ201911).

Funding

As mentioned above,this work was only financially supported by the Science and Technology Department of Sichuan Province(2020YFG0042) and the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices(KFJJ201911).

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Correspondence to Zhiqin Zhong.

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Zhong, Z., Luo, X., Zhou, L. et al. Ellipsometry study on silicon nitride film with uneven thickness distribution by plasma-enhanced chemical vapor deposition. Opt Quant Electron 55, 264 (2023). https://doi.org/10.1007/s11082-022-04270-x

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