Abstract
This article presents the impact of different radio frequency (RF) power during deposition on the ZnO thin films properties, deposited using RF sputtering deposition technique. The effect of these process parameters on the structural, morphological, electrical and optical properties are elaborated in detail. The crystalline quality and optical parameters of the films are affected by RF power variation during film deposition. The film’s crystal quality was reasonably decent with the RF power reaching 100 W. For a 5 µm × 5 µm scan area, the RMS roughness value changed from 1.29 to 3.22 nm as the PRF increases from 50 to 100 W. FESEM images depicts the decrement in grain size of ZnO thin film as RF power increases. When the RF power was varied during deposition, both mobility and carrier concentrations changed. Blue shift was observed in UV emission with increasing RF power.
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The authors would like to express their gratitude’s to laboratory associates of IIT Patna’s Department of Physics and Mechanical Engineering for providing a service for thin film characterization.
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RRK had performed the deposition, characterization, data analysis and writing parts. Raghvendra helps in data analysis and drafting the manuscript. SKP helped in the drafting and review of the manuscript.
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Kumar, R.R., Shukla, R. & Pandey, S.K. Impact of radio frequency power on the optoelectronic properties of ZnO films. Opt Quant Electron 54, 582 (2022). https://doi.org/10.1007/s11082-022-03983-3
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DOI: https://doi.org/10.1007/s11082-022-03983-3