Abstract
In this article, we investigate the effect of reducing the speed of light by applying an electric field. This method is called tunneling-induced transparency (TIT). The research is based on the quantum structure of the ten layers of gallium arsenide and quantum dots of indium arsenide. We simulate and examine the transmission capacity of this device in terms of passing the wavelengths of the optical window. By widening the frequency transparency window, we can increase the light transmission limit of the probe. After passing the electric field of the probe light through a device based on quantum dots, the group velocity is predicted to be decreased by about 3 million times, which is about twice as much as similar work reported before Borges et al. (Phys Rev B 85:115425, 2012). Our main device is made from gallium arsenide, the dots are made from indium arsenide, and their surface distance from each other is 50 nm.
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices.
Guest edited by Slawek Sujecki, Asghar Asgari, Donati Silvano, Karin Hinzer, Weida Hu, Piotr Martyniuk, Alex Walker and Pengyan Wen.
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Mardani, H., Kaatuzian, H. & Choupanzadeh, B. Optical Retardation based on Tunneling-Induced Transparency in Quantum Dot Slow light Devices. Opt Quant Electron 54, 538 (2022). https://doi.org/10.1007/s11082-022-03909-z
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DOI: https://doi.org/10.1007/s11082-022-03909-z