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Magnetically-supported electrically-induced formation of silicon carbide nanostructures on silicon substrate for optoelectronics applications

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Abstract

Synthesis of silicon carbide nanostructures is generally including complex chemical processes and often sophisticated technology. In this work, a new method to synthesize silicon carbide nanostructures on the surface of p-type silicon substrate is proposed by electrically-induced diffusion of carbon atoms deposited on this surface. This process was supported by magnetic field applied on the reaction volume. The electric field was applied throughout a needle-like anode that can increase the electric field intensity by two orders of magnitude. Accordingly, the reaction between carbon and silicon atoms within the surface layer is effectively possible. The structural, electrical and optoelectronics characteristics of the fabricated samples were introduced. A minimum particle size of about 19 nm was determined and reasonable purity of the synthesized nanostructures was confirmed. These nanostructures show peak photoluminescence at 435 nm when excited by a 325 nm radiation source. An anisotropic heterojunction from n-SiC/p-Si structure was formed with ideality factor of 0.53 and built-in potential of 2.20 eV. The proposed technique showed high reliability and very good reproducibility at low cost and simple requirements.

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  1. Department of Physics, College of Education, Al-Iraqia University, Baghdad, Iraq

    Oday A. Hammadi

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Hammadi, O.A. Magnetically-supported electrically-induced formation of silicon carbide nanostructures on silicon substrate for optoelectronics applications. Opt Quant Electron 54, 427 (2022). https://doi.org/10.1007/s11082-022-03824-3

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