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Analysis of distortion reduction in tunnel injection transistor laser using feedback Schottky diode

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Abstract

In this present work the intermodulation distortions in Tunnel Injection Transistor Laser (TI-TL) is analyzed and its reduction is evaluated by using Schottky diode based feedback techniques. Rate equations are used to model the TI-TL and they are numerically solved by using fourth order Runge-Kutta method. The number of components used in this distortion reduction scheme is less when compared with the existing schemes. Maximum modulation depth and minimum distortion are obtained at a tunneling probability of 0.6. It provides a bandwidth and modulation depth of 17.6 GHz and 0.85 respectively at a bias current of 2IBth. An improvement of 4.64 dB and 1.91 dB are obtained for IMD3 and IMD5 under second harmonic injection technique. In case of Schottky diode based feedback scheme, a reduction of 8.21 dB and 2.1 dB are obtained. Further, SFDR of 80.43 dB Hz2/3 and 82.6 dB Hz2/3 are obtained for second harmonic injection and Schottky diode feedback schemes respectively.

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Acknowledgements

The authors gratefully acknowledge Anna University, Chennai for providing financial support to carry out this research work under Anna Centenary Research Fellowship (ACRF) scheme. One of the authors, S.V. Vinodhini is thankful to Anna University, Chennai for the award of Anna Centenary Research Fellowship [grant no.: CFR/ACRF/2018/34].

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  1. Department of Electronics Engineering, Madras Institute of Technology Campus, Anna University Chennai, Chennai, 600 044, India

    S. V. Vinodhini, S. Piramasubramanian & M. Ganesh Madhan

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  1. S. V. Vinodhini
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  2. S. Piramasubramanian
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  3. M. Ganesh Madhan
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Correspondence to S. V. Vinodhini.

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Vinodhini, S.V., Piramasubramanian, S. & Madhan, M.G. Analysis of distortion reduction in tunnel injection transistor laser using feedback Schottky diode. Opt Quant Electron 54, 364 (2022). https://doi.org/10.1007/s11082-022-03746-0

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