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Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip

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Abstract

In this paper, we analyzed the carrier transport effect on the high-speed modulation performance of the integrated optoelectronic transceiving chip (IOTC). It will be determined by the hole transporting time through the p-side cladding layer of the IOTC VCSEL unit's intrinsic SCH cavity. For IOTC with long cavity length (1λ), shorter hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 9.55 to 11.2 GHz. For IOTC with short cavity length (1/2λ), longer hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 8.75 to 11.1 GHz.

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Funding

This work was supported in part by the National Natural Science Foundation of China (Grant No. 61874147, 61674020, 61674018 and 61904016), in part by the National Key Research and Development Program of China (Grant No. 2018YFB2200803 and 2018YFB2200104) and in part by Beijing Municipal Science & Technology Commission (Grant No.191100004819012).

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Authors and Affiliations

  1. School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Kai Liu, Yongqing Huang, Xiaofeng Duan, Xiaomin Ren, Qi Wang, Shiwei Cai & Xiaowen Dong

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  1. Kai Liu
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  2. Yongqing Huang
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  3. Xiaofeng Duan
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  4. Xiaomin Ren
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  6. Shiwei Cai
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  7. Xiaowen Dong
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Correspondence to Kai Liu.

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Employment: Beijing University of Posts and Telecommunications. Financial interests: No. Non-financial interests: No.

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Liu, K., Huang, Y., Duan, X. et al. Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip. Opt Quant Electron 54, 92 (2022). https://doi.org/10.1007/s11082-021-03478-7

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