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Analytical approach for polar magnetooptics in multilayer spin-polarized light emitting diodes based on InAs quantum dots

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Abstract

To explain the magneto-optical (MO) data in GaAs/InAs/GaAs/MgO/Co/Au thin-film structures, we modeled the optical interactions within magnetic layered structures. Firstly, for a numerical simulation of the MO effects, a full matrix model based on Yeh's formalism is employed, and secondly for the comparison between different magnetic and non-magnetic layer is considered different multilayer structures. We analyze the MO effects during vertical electron transport in spin-polarized light-emitting diode (spin-LEDs) devices. We observe the outside fields depend mainly on structural parameters. When we considered Co/Fe layers, we found that the intensities of emitted waves polarized along \(y\) and \({+45}^{0}\) directions are significantly increased during transport through the active region of the device, while for Co/Ag/Au structure these quantities have lower magnitudes and sandwich structure Au/Co/Au has the lowest values.

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Authors and Affiliations

  1. School of Microelectronics, Xidian University, Xi’an, 710071, People’s Republic of China

    Wenjian Wang & Yintang Yang

  2. Department of Applied Engineering, Zhejiang Business College, Hangzhou, 310053, People’s Republic of China

    Wenjian Wang

  3. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran

    Kobra Hasanirokh

  4. Department of Applied Mathematics, Faculty of Mathematical Sciences, University of Tabriz, Tabriz, Iran

    Jalil Manafian

  5. Natural Sciences Faculty, Lankaran State University, 50, H. Aslanov str., Lankaran, Azerbaijan

    Jalil Manafian

  6. Department of System Programming, South Ural State University, 454080, Chelyabinsk, Russia

    Mostafa Abotaleb

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  1. Wenjian Wang
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  2. Kobra Hasanirokh
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Correspondence to Jalil Manafian.

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Wang, W., Hasanirokh, K., Manafian, J. et al. Analytical approach for polar magnetooptics in multilayer spin-polarized light emitting diodes based on InAs quantum dots. Opt Quant Electron 54, 137 (2022). https://doi.org/10.1007/s11082-021-03461-2

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