Abstract
The emerging low noise applications put forward demanding requirements on the photoelectric conversion devices. In this paper, the aperture of understanding the phase noise of photodetectors is filled up and low phase noise photodetector schemes configured by OPA855 and HMC8411, with G11193-02R, are proposed to implement low phase noise measurements regarding near-infrared (NIR) lasers with repetition rate up to 400 MHz. Phase noise characteristics of two proposed photodetectors were investigated under different carrier frequencies and carrier powers. The OPA855 fabricated photodetector displayed comparable phase noise characteristics with the HMC8411 fabricated photodetector, the optimal results were −147.5 dBc/Hz and −144.0 dBc/Hz for the white phase noise, 83 fs and 274 fs for the integrated root-mean-squared timing jitter in the range [1 kHz, 10 MHz], and −162.3 dBc/Hz and −165.3 dBc/Hz for the theoretical noise floor, with the carrier provided by LMX2594EVM and SDG6012X-E, respectively. This indicates that the elaborate op amp fabricated photodetector is adequate for high repetition rate circumstances, could be the potential candidate for various applications, including NIR frequency metrology and high-speed optical sampling.
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Acknowledgements
This work is supported by the National Natural Science Foundation of China (No. 61627802), the Natural Science Foundation of Jiangsu Province (No. BK20180460), the Fundamental Research Funds for the Central Universities (No. 30920021126), and the High-Level Educational Innovation Team Introduction Plan of Jiangsu, China.
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Geng, X., Luo, S., Li, L. et al. Phase noise characterization photodetectors for near-infrared mode-locked lasers with repetition rates up to 400 MHz. Opt Quant Electron 53, 687 (2021). https://doi.org/10.1007/s11082-021-03350-8
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DOI: https://doi.org/10.1007/s11082-021-03350-8