Abstract
In the present paper, a theoretical model for calculating the carrier mobility which is a result of the existence of a truncated conical quantum dots of n-type quantum dot infrared photodetectors (QDIPs) is developed. This model is built on solving Boltzmann’s transport equation that is a complex integro-differential equation describing the carrier transport. The time-domain finite-difference method is used in this numerical solution. The influences of dimensions and density of the QDs for this structure on the carrier mobility are studied. Eventually, the calculated mobility for truncated conical InAs/GaAs QDIP is contrasted to other conical, spherical, and hemispherical QD structures. The model put forward is a generic model that is applicable to various structures of truncated conical QDs devices.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Code availability
The authors declare that they have made their custom code.
References
Ameen, T.A., El-Batawy, Y.M.: Polarization dependence of absorption by bound electrons in self-assembled quantum dots. J. Appl. Phys. 113(19), 193102 (2013)
Ameen, T.A., El-Batawy, Y.M., Abouelsaood, A.A.: Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors. J. Appl. Phys. 115(6), 063703 (2014)
Ameen, T.A., El-Batawy, Y.M.: Bound to continuum absorption coefficient for spherical and conical quantum dots. J. Opt. Quant. Electron. 47(2), 149–157 (2015). https://doi.org/10.1007/s11082-014-9894-2
Banoo, K., Technologies, A., Shu, C., Jerome, J.W.: Simulating quasi-ballistic transport in si nanotransistors. VLSI DESIGN 13(1–4), 5–13 (2001). https://doi.org/10.1155/2001/16023
Barve, A.V., Lee, S.J., Noh, S.K., Krishna, S.: Review of current progress in quantum dot infrared photodetectors. Laser Photonics Rev. 4(6), 738–750 (2010). https://doi.org/10.1002/lpor.200900031
Dardano, P., Ferrara, M.A.: Integrated photodetectors based on Group IV and colloidal semiconductors: Current state of affairs. Micromachines 11(9), 842 (2020). https://doi.org/10.3390/MI11090842
Deviprasad, V.P., Das, D., Tongbarm, B., Panda, D., Paul, S., Mondal, S., Chakrabarti, S.: Spatial optimization of modulation doping in P-I-P QDIPs: towards achieving higher operating temperature. IEEE Trans. Nanotechnol. 19(c), 247–254, 2020. https://doi.org/10.1109/TNANO.2019.2937093
El-Batawy, Y.M., Hosny, A.: Modeling of carrier mobility for semispherical quantum dot infrared photodetectors (QDIPs). J. Opt. Quantum Electron. 52(2), 60 (2020)
Ghimire, H., Jayaweera, P.V.V., Somvanshi, D., Lao, Y., Perera, A.G.U.: Recent progress on extended wavelength and split-offband heterostructure infrared detectors. Micromachines 11(6), 1–16 (2020). https://doi.org/10.3390/mi11060547
Lim, H., Zhang, W., Tsao, S., Sills, T., Szafraniec, J., Mi, K., Movaghar, B., Razeghi, M.: Quantum dot infrared photodetectors: comparison of experiment and theory. Phys. Rev. B Condens. Matter Mater. Phys. 72(8), 1–15 (2005). https://doi.org/10.1103/PhysRevB.72.085332
Liu, H.C., Gao, M., McCaffrey, J., Wasilewski, Z.R., Fafard, S.: Quantum dot infrared photodetectors. Appl. Phys. Lett. 78(1), 79–81 (2001). https://doi.org/10.1063/1.1337649
Liu, H., Tong, Q., Liu, G., Yang, C., Shi, Y.: Performance characteristics of quantum dot infrared photodetectors under illumination condition. Opt. Quantum Electron. 47(3), 721–733 (2015). https://doi.org/10.1007/s11082-014-9947-6
Martyniuk, P., Rogalski, A.: Quantum-dot infrared photodetectors: Status and outlook. Prog. Quantum Electron. 32(3–4), 89–120 (2008). https://doi.org/10.1016/j.pquantelec.2008.07.001
Naser, M.A., Deen, M.J., Thompson, D.A.: Photocurrent modeling and detectivity optimization in a resonant-tunneling quantum-dot infrared photodetector. EEE J. Quantum Electron. 46(6), 849–859 (2010). https://doi.org/10.1109/JQE.2010.2040245
Piprek, J.: Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation. Academic Press Inc., San Diego, California (2003)
Ridley, B.K.: Quantum Processes in Semiconductors, 4th edn. Oxford University Press Inc., New York (1999)
Sengupta, S., Chakrabarti, S.: Structural, optical and spectral behaviour of InAs-based quantum dot heterostructures: applications for high-performance infrared photodetectors (2017)
Shur, M.S.: GaAs devices and circuits. Springer Science & Business Media (2013)
Youssef, S., El-Batawy, Y.M., Abouelsaood, A.A.: Effect of self assembled quantum dots on carrier mobility, with application to modeling the dark current in quantum dot infrared photodetectors. J. Appl. Phys. 120(12), 124506 (2016). https://doi.org/10.1063/1.4963287
Funding
The authors declare that they did not receive any funding.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
El-Batawy, Y.M., Feraig, M. Modeling and characterization of carrier mobility for truncated conical quantum dot infrared photodetectors. Opt Quant Electron 53, 706 (2021). https://doi.org/10.1007/s11082-021-03346-4
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-021-03346-4