Abstract
We investigate the junction temperature measurements for GaN-based blue light emitting diodes (LEDs) using nonlinear dependence of the forward voltage (Vf) on temperature. Unlike the conventional linear model of the dependence of Vf on temperature, the modeling of the temperature dependent Vf with a quadratic function showed good agreements with measured data in the temperature range between 20 and 100 °C. Using the proposed quadratic model, the junction temperature and thermal resistance of the measured LED could be accurately determined as the ambient temperature varied. It was observed that the junction temperature increment remained almost unchanged as the ambient temperature increased from 20 to 80 °C, which could be attributed to the interplay between the decrease in series resistance and the increase in non-radiative recombination with increasing temperature. The presented method for accurate determination of the junction temperature is expected to be advantageously employed for the thermal management of high-power LEDs.
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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.
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Acknowledgements
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT (NRF-2019R1A2C1010160) and the Ministry of Education (NRF-2016R1D1A1B03932092).
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National Research Foundation of Korea Grant.
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Onwukaeme, C., Choi, WJ. & Ryu, HY. Accurate determination of junction temperature in a GaN-based blue light-emitting diode using nonlinear voltage-temperature relation. Opt Quant Electron 53, 513 (2021). https://doi.org/10.1007/s11082-021-03182-6
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DOI: https://doi.org/10.1007/s11082-021-03182-6