Abstract
Carrier transport mechanism associated with the thickness of the absorbing layer in GaAs-based blocked-impurity-band (BIB) far-infrared detector has been investigated in detail. It is found that responsivity linearly increases with the increased thickness of absorbing layer first, and after achieving a peak value, and then starts dropping slowly. In order to explore the carrier transport mechanism behind the phenomena, the physical meaning of responsivity has been illuminated first, and then the vertical profiles of the optical generation rate, the electric field intensity, and the carrier mobility have been obtained, respectively. It is demonstrated that the carrier transport mechanism associated with the thickness of the absorbing layer can be attributed to the competing effects of the optical generation rate, the electric field intensity, and the carrier mobility.
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Acknowledgements
This work was supported by Shanghai Rising-Star Program (Grant No. 17QB1403900), the National Natural Science Foundation of China (Grant Nos. 61404120, and 61705201), Shanghai Sailing Program (Grant No. 17YF1418100), and Shanghai Youth Top-Notch Talent Development Program.
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Wang, X., Ma, W., Chen, Y. et al. Carrier transport mechanism associated with the thickness of the absorbing layer in GaAs-based blocked‐impurity‐band (BIB) far‐infrared detectors. Opt Quant Electron 53, 250 (2021). https://doi.org/10.1007/s11082-021-02886-z
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DOI: https://doi.org/10.1007/s11082-021-02886-z