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Optimization by simulation for photovoltaic applications of the quaternary semiconductor InGaAsP epitaxed on InP substrate

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Abstract

The objective of this work is to simulate and optimize the physical properties of the quaternary semiconductor InGaAsP deposited on InP substrate, in order to enhance the efficiency of photovoltaic cells through the optimization of the bandgap and the absorption coefficient. To this end, the impact of the Gallium and Phosphorus concentrations on the strain as well as on the bandgap energy were studied. We have found that the absorption coefficient increases with the strain to reach 4.4 × 104 cm−1, thus, the strain allows to provide additional flexibility on the structure of solar cells and makes the alloy InGaAsP/InP promising for the design of photovoltaic cells based on the quaternary InGaAsP compound.

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Authors and Affiliations

  1. Laboratory of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, University Hassan II of Casablanca, BP146, Mohammedia, Morocco

    A. Tarbi, M. A. Sellam & Y. Elkouari

  2. Materials and Subatomic Physics Laboratory, Ibn-Tofail University, Kenitra, Morocco

    T. Chtouki & H. Erguig

  3. Superior School of Technology, Ibn-Tofail University, Kenitra, Morocco

    T. Chtouki & H. Erguig

  4. Faculty of Technology, University of Saad, Dahlab Blida.1, Blida, Algeria

    A. Benahmed & A. Aissat

  5. Institute of Physics, Faculty of Mathematics and Natural Science, Jan Dlugosz University in Czestochowa, Al. Armii Krajowej 13/15, 42-200, Czestochowa, Poland

    A. Migalska-Zalas

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  1. A. Tarbi
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  2. T. Chtouki
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  3. A. Benahmed
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  4. M. A. Sellam
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  5. Y. Elkouari
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  6. H. Erguig
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  7. A. Migalska-Zalas
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  8. A. Aissat
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Correspondence to A. Tarbi or T. Chtouki.

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Tarbi, A., Chtouki, T., Benahmed, A. et al. Optimization by simulation for photovoltaic applications of the quaternary semiconductor InGaAsP epitaxed on InP substrate. Opt Quant Electron 53, 134 (2021). https://doi.org/10.1007/s11082-021-02771-9

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  • DOI: https://doi.org/10.1007/s11082-021-02771-9

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