Abstract
Lower cost and smaller volume are imperious demands for active optical measuring and imaging systems. Different from the traditional methods using separate light emitting devices and light detecting devices, a novel way is provided to acquire a simple active optical detecting system. It is found that a commercial light emitting diode (LED) can work as a photodetector utilizing the fact that localized photogenerated carriers within an appropriate p–n junction escape efficiently. Furthermore, a prototype of a simple active optical detecting system is fabricated with a commercial LED wafer on which a light emitting device and a light detecting device are integrated monolithically. It is measured out a good ability in detection for a target with a smooth or rough surface. These results exhibit a considerable possibility of a cheap, flexible and small simple active optical detecting system.
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Albota, M.A., Heinrichs, R.M., Kocher, D.G., Fouche, D.G., Player, B.E., Brien, M.E.O., Aull, B.F., Zayhowski, J.J., Mooney, J., Willard, B.C., Carlson, R.R.: Three-dimensional imaging laser radar with a photon-counting avalanche photodiode array and microchip laser. Appl. Opt. 41(36), 7671 (2002)
Blais, F.: Review of 20 years of range sensor development. J. Elect. Imaging 13(1), 231–243 (2004)
Chen, E.-C., Tseng, S.-R., Jia-Hong, J., Yang, C.-M., Meng, H.-F., Horng, S.-F., Shu, C.-F.: Polymer infrared proximity sensor. Appl. Phys. Lett. 93(6), 63304 (2008)
Dehao, W., Zhong, W.-D., Ghassemlooy, Z., Chen, C.: Short-range visible light ranging and detecting system using illumination light emitting diodes. IET Optoelectron. 10(3), 94–99 (2016)
Kang, S.S., Geum, D.-M., Kwak, K., Kang, J.-H., Shim, C.-H., Hyun, H.Y., Kim, S.H., Choi, W.J., Choi, S.-H., Park, M.-C., Song, J.D.: As on GaAs photodetectors using thin InAlAs graded buffers and their application to exceeding short-wave infrared imaging at 300 K. Sci. Rep-UK 9(1), 1–8 (2019)
Liu, J., Wang, L., Jiang, Y., Ma, Z., Wang, W., Sun, L., Jia, H., Wang, W., Chen, H.: A prototype photon detector based on interband transition of quantum wells. J. Infrared Millim. Waves 36(2), 129–134 (2017)
Lotfi, H., Li, L., Rassel, S.M.S., Yang, R.Q., Corrége, C.J., Johnson, M.B., Larson, P.R., Gupta, J.A.: Monolithically integrated mid-IR interband cascade laser and photodetector operating at room temperature. Appl. Phys. Lett. 109(15), 151111 (2016)
Masuda, R.: Multifunctional optical proximity sensor using phase modulation. J. Robot. Syst. 3(2), 137–147 (1986)
Molebny, V., McManamon, P., Steinvall, O., Kobayashi, T., Chen, W.: Laser radar: historical prospective—from the East to the West. Opt. Eng. 56(3), 31220 (2017)
Oggier, T., Lehmann, M., Kaufmann, R., Schweizer, M., Richter, M., Metzler, P., Lang, G., Lustenberger, F., Blanc, N.: Presented at the Optical Design and Engineering (2004) (unpublished)
Pereiro, J., Rivera, C., Navarro, A., Munoz, E., Czernecki, R., Grzanka, S., Leszczynski, M.: Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance. IEEE J. Quant. Elect. 45(6), 617–622 (2009)
Remondino, F., Stoppa, D.: TOF Range-Imaging Cameras. Springer, Berlin (2013)
Sgrott, O., Mosconi, D., Perenzoni, M., Pedretti, G., Gonzo, L., Stoppa, D.: A 134-pixel CMOSS sensor for combined time-of-flight and optical triangulation 3-D imaging. IEEE J. Solid-ST Circ 45(7), 1364 (2010)
Sun, Q., Wang, L., Jiang, Y., Ma, Z., Wang, W., Sun, L., Wang, W., Jia, H., Zhou, J., Chen, H.: Direct observation of carrier transportation process in InGaAs/GaAs multiple quantum wells used for solar cells and photodetectors. Chin. Phys. Lett 33(10), 106801 (2016)
Sun, L., Wang, L., Lu, J.-L., Liu, J., Fang, J., Xie, L.-L., Hao, Z.-B., Jia, H.-Q., Wang, W.-X., Chen, H.: Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well. Chin. Phys B 27(4), 47209 (2018)
Taubenblatt, M.S.: Optical interconnects for high-performance computing. J. Lightwave Technol. 30(4), 448–457 (2012)
Wang, W., Wang, L., Jiang, Y., Ma, Z., Sun, L., Liu, J., Sun, Q., Zhao, B., Wang, W., Liu, W., Jia, H., Chen, H.: Carrier transport in III-V quantum-dot structures for solar cells or photodetectors. Chin. Phys. B 25(9), 174–179 (2016)
Wei, C.M., Cho, K.S., Chen, Y.F., Peng, Y.H., Chiu, C.W., Kuan, C.H.: Photogalvanic effects for interband transition in p-Si0.5Ge0.5/Si multiple quantum wells. Appl. Phys. Lett. 91(25), 252102 (2007)
Yang, H., Ma, Z., Jiang, Y., Wu, H., Zuo, P., Zhao, B., Jia, H., Chen, H.: The enhanced photo absorption and carrier transportation of InGaN/GaN quantum wells fro photodiode detector applications. Sci. Rep-UK 7, 43357 (2017)
Zhang, S.K., Wang, W.B., Yun, F., He, L., Morkoç, H., Zhou, X., Tamargo, M., Alfano, R.R.: Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells. Appl. Phys. Lett. 81(24), 4628–4630 (2002)
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This work was supported by National Natural Science Foundation of China (Grant Nos. 61704008 and 11574362) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000).
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Yue, C., Wang, L., Lu, J. et al. Monolithic light emitting device and light detecting device fabricated with a commercial LED wafer. Opt Quant Electron 52, 361 (2020). https://doi.org/10.1007/s11082-020-02478-3
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DOI: https://doi.org/10.1007/s11082-020-02478-3