Abstract
We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentrated in the active area, especially in the center. Deep level defects are not obviously observed, and the dominated generation recommendation current and the trap assisted tunneling current are greatly suppressed. When operated in gated-mode, a photon detection efficiency (PDE) of 70% is achieved, with the DCR of 48 kHz at 226 K. And the afterpulse probability remains below 2.2% for PDEs up to 62.7%.
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References
Chen, H., Jiang, M., Sun, S., Tang, G., Liang, L.: Room temperature continuous frequency tuning InGaAs/InP single-photon detector. AIP Adv. 8, 075106 (2018). https://doi.org/10.1063/1.5030141
Donnelly, J.P., Duerr, E.K., McIntosh, K.A., Dauler, E.A., Oakley, D.C., Groves, S.H., Vineis, C.J., Mahoney, L.J., Molvar, K.M., Hopman, P.I., Jensen, K.E., Smith, G.M., Verghese, S., Shaver, D.C.: Design considerations for 1.06-μm InGaAsP–InP Geiger-mode avalanche photodiodes. IEEE J. Quantum Electron. 42, 797–809 (2006). https://doi.org/10.1109/jqe.2006.877300
Itzler, M.A., Jiang, X., Entwistle, M., Slomkowski, K., Tosi, A., Acerbi, F., Zappa, F., Cova, S.: Advances in InGaAsP-based avalanche diode single photon detectors. J. Mod. Opt. 58, 174–200 (2011). https://doi.org/10.1080/09500340.2010.547262
Itzler, M.A., Krishnamachari, U., Entwistle, M., Jiang, X., Owens, M., Slomkowski, K.: Dark count statistics in Geiger-mode avalanche photodiode cameras for 3-D imaging LADAR. IEEE J Sel. Top. Quantum Electron. 20, 3802111 (2014). https://doi.org/10.1109/jstqe.2014.2321525
Jiang, X., Itzler, M., O’Donnell, K., Entwistle, M., Owens, M., Slomkowski, K., Rangwala, S.: InP-based single-photon detectors and Geiger-mode APD arrays for quantum communications applications. IEEE J. Sel. Top. Quantum Electron. 21, 3800112 (2015). https://doi.org/10.1109/JSTQE.2014.2358685
Lee, M.S., Byung, K.P., Woo, M.K., Park, C.H., Kim, Y.-S., Han, S.-W., Moon, S.: Countermeasure against blinding attacks on low-noise detectors with a background-noise-cancellation scheme. Phys. Rev. A 94, 062321 (2016). https://doi.org/10.1103/PhysRevA.94.062321
Liu, M., Hu, C., Bai, X., Guo, X., Campbell, J.C., Pan, Z., Tashima, M.M.: High-performance InGaAs/InP single-photon avalanche photodiode. IEEE J. Sel. Top. Quantum Electron. 13, 887–894 (2007). https://doi.org/10.1109/jstqe.2007.903855
Petticrew, J.D., Dimler, S.J., Tan, C.H., Ng, J.S.: Modeling temperature-dependent avalanche characteristics of InP. J. Lightwave Technol. 38, 961–965 (2020). https://doi.org/10.1109/JLT.2019.2948072
Ren, J.-G., Xu, P., Yong, H.-L., Zhang, L., Liao, S.-K., Yin, J., Liu, W.-Y., Cai, W.-Q., Yang, M., Li, L., Yang, K.-X., Han, X., Yao, Y.-Q., Li, J., Wu, H.-Y., Wan, S., Liu, L., Liu, D.-Q., Kuang, Y.-W., He, Z.-P., Shang, P., Guo, C., Zheng, R.-H., Tian, K., Zhu, Z.-C., Liu, N.-L., Lu, C.-Y., Shu, R., Chen, Y.-A., Peng, C.-Z., Wang, J.-Y., Pan, J.-W.: Ground-to-satellite quantum teleportation. Nature 549, 70–73 (2017). https://doi.org/10.1038/nature23675
Rogalski, A.: Recent progress in infrared detector technologies. Infrared Phys. Technol. 56, 136–154 (2011). https://doi.org/10.1016/j.infrared.2010.12.003
Tosi, A., Acerbi, F., Anti, M., Zappa, F.: InGaAs/InP single-photon avalanche diode with reduced afterpulsing and sharp timing response with 30 ps tail. IEEE J. Quantum Electron. 48, 1227–1232 (2012). https://doi.org/10.1109/JQE.2012.2208097
Tu, J., Zhang, S., Zhao, Y.: Device-level optimization of sensitivity in high-speed separated absorption, grading, charge, and multiplication avalanche photodiode. Opt. Eng. 57, 037101 (2018). https://doi.org/10.1117/1.OE.57.3.037101
Uliel, Y., Cohen-Elias, D., Sicron, N., Grimberg, I., Snapi, N., Paltiel, Y., Katz, M.: InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection. Infrared Phys. Technol. 84, 63–71 (2017). https://doi.org/10.1016/j.infrared.2017.02.003
Vasileuski, Y., Malyshev, S., Chizh, A.: Design considerations for guarding-free planner InGaAs/InP avalanche photodiode. Opt. Quantum Electron. 40, 1247–1253 (2008). https://doi.org/10.1063/1.2815916
Wang, R., Tian, Y., Li, Q., Zhao, Y.: High gain and low excess noise InGaAs/InP avalanche photodiode with lateral impact ionization. Appl. Opt. 59, 1980–1984 (2020). https://doi.org/10.1364/AO.382001
Wen, J., Wang, W.J., Chen, X.R., Lu, W.: Origin of large dark current increase in InGaAs/InP avalanche photodiode. J. Appl. Phys. 123, 161530 (2018). https://doi.org/10.1063/1.4999646
Xi, S.P., Gu, Y., Zhang, Y.G., Chen, X.Y., Ma, Y.J., Zhou, L., Du, B., Shao, X.M., Fang, J.X.: InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection. Infrared Phys. Technol. 75, 65–69 (2016). https://doi.org/10.1016/j.infrared.2015.12.013
Yan, S., Yang, G., Li, Y., Li, Q., Zhang, B., Zhang, Y., Wang, C.: Pulse-based machine learning: adaptive waveform centroid discrimination for LIDAR system. Infrared Phys. Technol. 103, 103110 (2019). https://doi.org/10.1016/j.infrared.2019.103100
Yin, J., Cao, Y., Cai, W.-Q., Liu, W.-Y., Zhang, L., Yang, L., Ren, J.-G., Yin, J., Shen, Q., Cao, Y., Li, Z.-P., Li, F.-Z., Chen, X.-W., Sun, L.-H., Jia, J.-J., Wu, J.-C., Jiang, X.-J., Wang, J.-F., Huang, Y.-M., Wang, Q., Zhou, Y.-L., Deng, L., Xi, T., Ma, L., Hu, T., Zhang, Q., Chen, Y.-A., Liu, N.-L., Wang, X.-B., Zhu, Z.-C., Liu, C.-Y., Shu, R., Peng, C.-Z., Wang, J.-Y., Pan, J.-W.: Satellite-to-ground quantum key distribution. Nature 549, 43–47 (2017). https://doi.org/10.1038/nature23655
Zhao, Z.L., Zhang, D.D., Qin, L., Tang, Q., Wu, R.H., Liu, J.J., Zhang, Y.P., Zhang, H., Yuan, X.F., Liu, W.: InGaAs–InP avalanche photodiodes with dark current limited by generation–recombination. Opt. Express 19, 8546–8556 (2011). https://doi.org/10.1364/OE.19.008546
Acknowledgements
This work was supported by National key R&D Program of China (Grant No. 2016YFB0402404), Natural Science Foundation of China (Grant No. 11991063), Key research project of Frontier Science of Chinese Academy of Sciences (Grant No. QYZDJ-SSW-JSC007), and Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01).
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Zhou, M., Wang, W., Qu, H. et al. InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency. Opt Quant Electron 52, 299 (2020). https://doi.org/10.1007/s11082-020-02422-5
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DOI: https://doi.org/10.1007/s11082-020-02422-5