Abstract
In this paper, we study the electronic properties of arsenene nanoribbons (AsNRs) by using first-principles density functional theory calculations. The effect of ribbon width and external transverse electric field on the band gap of AsNRs has been lucubrated. AsNRs show a giant Stark effect with external transverse electric field and the carriers mainly transport along the center of nanoribbons. The results show that the impurity and vacancy defects at the edge of AsNRs have little effect on its electronic properties. In addition, the AsNRs-based field-effect transistor shows a high on/off ratio up to 9.38 × 103. Our results gain a deep insight into the electronic properties of AsNRs, we expect these findings can be instrumental for further experimental investigation of AsNRs-based devices.
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Acknowledgements
Authors acknowledge the financial support from the Key Project of Jiangsu Province, China (Grant No. BE2016174), National Science Foundation of China (Grant Nos. 61634002, U1830109, and 61604080), Natural Science Foundation of Jiangsu Province (Grant No. BK20160883), and the Scientific Research Foundation of Graduate School of Nanjing University (2018-CL01).
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Wang, J., Fan, Y., Xue, J. et al. Electronic properties of arsenene nanoribbons for FET application. Opt Quant Electron 52, 39 (2020). https://doi.org/10.1007/s11082-019-2154-8
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DOI: https://doi.org/10.1007/s11082-019-2154-8