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Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors

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Abstract

Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors has been investigated. Device structure, processing steps and physical models are described in detail. In this work, our discussion is mainly focused on the operation temperature (Tope) of BIB detector. It is demonstrated that the critical Tope and the optimal Tope both exist for GaAs-based BIB detector. It is only when the temperature-assisted photo electron excitation process is fundamentally equivalent to the temperature-assisted photo electron recombination process that the optimal Tope occurs, and it is only when the temperature-assisted photo electron excitation process is dominated by the temperature-assisted photo electron recombination process that the critical Tope occurs.

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Acknowledgements

This work was supported by Shanghai Rising-Star Program (Grant No. 17QB1403900), Young Elite Scientists Sponsorship Program by CAST (Grant No. 2018QNRC001), the National Natural Science Foundation of China (Grant Nos. 61404120, and 61705201), Shanghai Sailing Program (Grant No. 17YF1418100), and Shanghai Youth Top-Notch Talent Development Program.

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Authors and Affiliations

  1. The 50th Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai, 200331, China

    Xiaodong Wang, Yulu Chen, Bingbing Wang, Chuansheng Zhang & Haoxing Zhang

  2. Laboratory of Advanced Material, Fudan University, Shanghai, 200438, China

    Xiaoyao Chen

  3. Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai, 20050, China

    Bingbing Wang

  4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100049, China

    Bingbing Wang

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  1. Xiaodong Wang
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  2. Yulu Chen
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  3. Xiaoyao Chen
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  4. Bingbing Wang
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  5. Chuansheng Zhang
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  6. Haoxing Zhang
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Correspondence to Yulu Chen.

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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, Guest edited by Angela Thränhardt, Karin Hinzer, Weida Hu, Stefan Schulz, Slawomir Sujecki and Yuhrenn Wu.

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Wang, X., Chen, Y., Chen, X. et al. Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors. Opt Quant Electron 52, 44 (2020). https://doi.org/10.1007/s11082-019-2150-z

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